2008
DOI: 10.1016/j.ceramint.2007.07.013
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Phase development in Ba(Mg1/3Ta2/3)O3 via conventional and B-site precursor routes

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Cited by 4 publications
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“…2,3) Ba(Mg 1/3 ,Ta 2/3 )O 3 (BMT) is a promising material for microwave devices owing to its low dielectric loss and temperature coefficient in the microwave frequency range. [4][5][6][7][8][9][10][11][12][13][14][15] Crystal structure is related to the dielectric loss. The crystal structure of BMT is determined by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning TEM (STEM), and first-principles calculations to obtain either the ordered or disordered occupation of the perovskite B sites by Mg and Ta.…”
Section: Introductionmentioning
confidence: 99%
“…2,3) Ba(Mg 1/3 ,Ta 2/3 )O 3 (BMT) is a promising material for microwave devices owing to its low dielectric loss and temperature coefficient in the microwave frequency range. [4][5][6][7][8][9][10][11][12][13][14][15] Crystal structure is related to the dielectric loss. The crystal structure of BMT is determined by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning TEM (STEM), and first-principles calculations to obtain either the ordered or disordered occupation of the perovskite B sites by Mg and Ta.…”
Section: Introductionmentioning
confidence: 99%