Phase development procedure of In2O3(ZnO)3 ceramics and its sintering behavior

Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas

“…The In 2 O 3 (ZnO) 2 target was fabricated using high purity In 2 O 3 (99.99%) and ZnO(99.9%) by a conventional ceramic processing technique [18]. Sputter-deposition was carried out at room temperature with an argon pressure of 10 mTorr and a sputtering power of 50 W. The distance between target and substrate was fixed to 70 mm.…”

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

“…As for the IZO films, they were deposited on glass substrates (Coning EAGLE2000) using RF magnetron sputtering. The IZO targets were fabricated using high purity In 2 O 3 (99.99%) and ZnO (99.9%) by a conventional ceramic processing technique [42]. The substrates were cleaned in an ultrasonic bath with trichloroethylene, acetone, and ethanol prior to loading in the deposition chamber.…”

Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method

“…However, Superior characteristics to improve the electrical conductivity of ITO films were chosen instead of the IZO. Recently, indium-zinc oxide [1][2][3][4][5][6][7] and numerous studies have shown. In particular, Moriga et al [1] revealed nine homologous compounds of In 2 O 3 (ZnO) k composition (k = 3, 4, 5, 6, 7, 9, 11, 13 and 15).…”