Phase diagram of Si nanowire growth by disproportionation of SiO

Dewald, W.; Borschel, Christian; Stichtenoth, D.; Niermann, Tore; Ronning, Carsten

doi:10.1016/j.jcrysgro.2010.02.007

Cited by 9 publications

(4 citation statements)

References 19 publications

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“…This was indeed observed for both the ZnO and the Si NWs growth (HRSEM micrographs in Figure ). The Si NWs growth from SiO ,, and the ZnO NWs growth from a ZnO:C mixture − ,,, are completely different processes. In the first, SiO vapor is generated and disproportionates on the Au catalyst SiO → Si + SiO 2 .…”

Section: Resultsmentioning

confidence: 99%

“…Nanowires (NWs) of different materials are considered excellent candidate materials to serve as building blocks of future electronic and optoelectronic devices. − Realization of this goal necessitates reproducible and controlled growth processes capable of tailoring the structure, morphology, and size of these NWs to meet specific demands. A common way of growing NWs is by thermal CVD, i.e., evaporation of growth species and their transport by a carrier gas to the substrates on which they nucleate and grow. − In spite of the huge amount of work reporting the growth of NWs from thermal CVD the role of the growth parameters still remains unclear. The researchers use different system geometries , (e.g., one tube, an inner tube inside an outer tube, different tube diameters) and a variety of growth conditions (temperature, carrier gas flow and pressure).…”

Section: Introductionmentioning

confidence: 99%

“…Studies of NWs growth (of both Si and ZnO) by thermal CVD at different locations were performed, varying the carrier gas flow and pressure conditions and correlated to the calculations to demonstrate the effect of the species distribution on the NWs growth. Si and ZnO were chosen as very different experimental study case systems both playing a central role in current NWs research, − allowing to check the generality of the present work. Note that the only two previously reported studies , attempting to simulate the ZnO NW growth process (applying COMSOL and ANSYS software) were preliminary in their nature.…”

Section: Introductionmentioning

confidence: 99%

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Role of Carrier Gas Flow and Species Diffusion in Nanowire Growth from Thermal CVD

et al. 2012

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A variety of nanowires can be grown in a tube furnace via the transport of evaporated species by a carrier gas toward substrates. The insufficient understanding and the resulting limited control typical for this research area motivated us to systematically study the distribution of the growth species in such processes and evaluate its effect on the nanowire growth. Calculations based on simple considerations as well as more sophisticated numerical (COMSOL) simulations were utilized to follow the time evolution of the species distribution at different carrier gas pressures and flow rates. We demonstrate that the balance between diffusion and convection must be appropriately tuned to ensure steady growth conditions (not achieved in many of the previously reported experiments). Experimental data of Si and ZnO nanowires growth is presented and supports the simulations. Insight into the appropriate design of nanowires growth experiments and a universal basis to compare between the results of different laboratories are provided.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Role of Carrier Gas Flow and Species Diffusion in Nanowire Growth from Thermal CVD

et al. 2012

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“…On the other hand, the decrease in the SiO 2 shell thickness and increase in crystalline Si core diameter may result in the formation of straight Si NWs. According to the points as reported in references [ 39 , 40 ], when the NWs mainly consist of amorphous oxide, there is no crystalline phase to stabilize the growth direction anymore, resulting in curved NWs. On the contrary, when the NWs mainly consist of no-oxide crystal, straight NWs would be preferentially formed.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Shao

Nie

et al. 2015

Nanoscale Res Lett

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Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40–200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas has significant impacts on the microstructure of the NWs. By increasing the hydrogen ratio in the forming gas, straight and crystal Si NWs with thin oxide shells are obtained. Both the conductive properties along and perpendicular to the NW are investigated by conductive atomic force microscopy (CAFM) on single NWs. The conductance perpendicular to the NW is too poor to be detected, while a weak conductance can be measured along the NW. The results indicate that the measured resistance mainly comes from the contact(s), and the Si NWs exhibit typical semiconductive conductance themselves, which should have potential applications in nanoelectronics.

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Unveiling the Oxygen Migration Retarding Effort of Carbon Coating During Disproportionation Enabling High‐ICE and Long‐Cycle‐Life SiO Anodes

Wang,

Wu,

Yang

et al. 2024

Adv Funct Materials

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Low initial coulombic efficiency (ICE) and poor cycling performance are the pain points that hinder the commercialization of silicon monoxide (SiO) anode materials. Unfortunately, disproportionation commonly used to enhance cycling performance significantly reduces prelithiation efficiency, making it difficult to achieve both high‐ICE and long‐cycle‐life SiO anodes. Herein, the intrinsic contradiction between disproportionation and prelithiation is successfully reconciled through the ingenious application of the carbon coating strategy, achieving a synergistic enhancement among the three processes (carbon coating, disproportionation, and prelithiation). The prepared SiO anode exhibits excellent electrochemical performance with an ICE as high as 113.74% and a reversible capacity of 713.68 mAh g−1 after 750 cycles. In‐depth investigations reveal that carbon optimizes the distribution of Si and O within the disproportionated SiO, effectively thinning the SiO2 surface layer and releasing the shielded Si, thereby enhancing reversible capacity and prelithiation efficiency. TG‐FTIR analysis further elucidates the underlying mechanism, demonstrating that the carbon effectively inhibits the outward migration and escape of O during disproportionation. In summary, this study uncovers the pivotal role of carbon coating in regulating the disproportionation behavior, promoting efficient prelithiation, and enhancing the capacity recovery of SiO.

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Phase diagram of Si nanowire growth by disproportionation of SiO

Cited by 9 publications

References 19 publications

Role of Carrier Gas Flow and Species Diffusion in Nanowire Growth from Thermal CVD

Role of Carrier Gas Flow and Species Diffusion in Nanowire Growth from Thermal CVD

Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Unveiling the Oxygen Migration Retarding Effort of Carbon Coating During Disproportionation Enabling High‐ICE and Long‐Cycle‐Life SiO Anodes

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