Phase diagrams of the diode effect in superconducting heterostructures

Abstract

At present the superconducting diode effect (SDE) attracts a lot of attention due to new possibilities in the superconducting electronics. One of the possible realizations of the SDE is the implementation in superconducting hybrid structures. In this case the SDE is achieved by means of the proximity effect. However, the optimal conditions for the SDE quality factor in hybrid devices remain unclear. In this study we consider the Superconductor/Ferromagnet/Topological insulator (S/F/TI) hybrid device and investigate the diode quality factor at different parameters of the hybrid structure. Consequently, we reveal important parameters that have crucial impact on the magnitude of the SDE quality factor.

Spin-Valve-Controlled Triggering of Superconductivity

“…The development of low-dissipation and non-volatile memory and control elements is one of the main tasks in superconducting electronics [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]. These elements can significantly help in the design of supercomputers, data centers, neuromorphic circuits, and quantum computing.…”