Phase equilibria in the CdAs2–Cd3As2–MnAs ternary system

Ril, A. I.; Федорченко, И. В.; Маренкин, С. Ф.; Kochura, A. V.; Kuz’ko, A. E.

doi:10.1134/s0036023617070191

Cited by 18 publications

(6 citation statements)

References 22 publications

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“…The phase separation seen from the STEM-EDX data is supported by the low solubility of Mn in Cd 3 As 2 . As a result, even for the MBE growth under non-equilibrium conditions, it is hard to overcome the kinetic barrier to form Mn-doped Cd 3 As 2 [34].…”

Section: Resultsmentioning

confidence: 99%

Challenges to magnetic doping of thin films of the Dirac semimetal Cd$_3$As$_2$

Xiao,

Held,

Rable

et al. 2021

Preprint

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Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd 3 As 2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd 3 As 2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd 3 As 2 , resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared to pristine Cd 3 As 2 films grown under similar conditions. This suggests that the surfactant effect might also serve to getter impurities. We observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd 3 As 2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.

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Section: Resultsmentioning

confidence: 99%

Challenges to magnetic doping of thin films of the Dirac semimetal Cd$_3$As$_2$

Xiao,

Held,

Rable

et al. 2021

Preprint

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“…The pressure dependences of the electrical resistivity, the Hall coefficient, the carrier mobility, the carrier concentration, and the magnetoresistance in the range of 3-4 GPa exhibit features associated with phase transitions. The structural transition from the tetragonal to monoclinic structure in Cd 3 As 2 occurs in the range of 2.6-4.67 GPa [7]. The spin-reorientation transition in MnAs at about 3.8 GPa and 110 K [8] has a substantial effect on the transport of charge carriers and the magnetoresistance of this composite.…”

Section: Introductionmentioning

confidence: 94%

“…Composites with high magnetoresistance values, in which semiconducting compounds of cadmium arsenide were used as a matrix and compounds of MnAs were used as ferromagnetic nanoclusters, were synthesized in [1]. As was shown in [2][3][4][5][6], the electrical and magnetic properties of the (Cd -x Mn 1 -x ) 3 As 2 nanocomposite are determined by MnAs nanoclusters.…”

Section: Introductionmentioning

confidence: 99%

Spin-Polarized Electric Current in Cd48.6Mn11.4As40 Nanocomposite

et al. 2021

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For the first time, the temperature dependences of the electrical resistivity and magnetization of the Cd 48.6 Mn 11.4 As 40 nanocomposite were measured in the temperature range of 10-350 K. It is shown that the electrical properties of Cd 48.6 Mn 11.4 As 40 are associated with spin polarization of intrinsic electrons in the Cd 3 As 2 matrix by spin-polarized electrons injected into it from ferromagnetic MnAs nanoclusters. With an increase in the magnetization of the entire sample, the angle between the magnetization directions of individual nanoclusters decreases and the spin-polarized current increases. Furthermore, an increase in the concentration of intrinsic carriers in the matrix leads to an increase in the spin-polarized current. This concept is also confirmed by measurements of current-voltage characteristics (CVCs) at voltages of up to 5 V at temperatures both below critical temperature T cg = 241 K of cluster glass formation (at 77 and 172 K) and above it (at 273.15 and 373.15 K), which exhibit an increasing deviation from the ohmic behavior with an increase in the stress. This means that the greater the spin polarization of intrinsic electrons in Cd 3 As 2 due to an increase in the injection of spin-polarized electrons from MnAs with an increase in the voltage, the higher the current.

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“…В работе [2] было установлено, что предел растворимости марганца в решетке составляет около 20 mol.% (x = 0.2). Превышение предельной концентрации при значении x > 0.2 приводит к образованию эвтектического сплава, содержащего наряду с твердым раствором (Cd 1−x Mn x ) 3 As 2 и наноразмерные ферромагнитные включения MnAs с элементарной ячейкой симметрии P63/mmc и параметрами a = 3.72 ¦ и c = 5.71 ¦ [3]. При комнатной температуре в MnAs при достижении давления 0.45 GPa происходит структурный переход: гексагональная структура типа NiAs с симметрией P63/mmc трансформируется в орторомбическую структуру типа MnP с симметрией Pnma [4].…”

Section: Introductionunclassified