The
integration of III–V semiconductors with Si in device
fabrication is facilitated by the use of nanoscale structures such
as nanowires. Nanowires are predominantly grown using Au seed particles;
however, the seed material is known to affect the nanowire growth
and properties. Here we present growth of GaAs nanowires using three
different seed particle materials: Au, Ag, and a AgAu alloy. By comparing
the results from the different seeds, we found that the growths of
Au- and AgAu-seeded nanowires were in general very similar, with homogeneous
and vertical nanowires observed in both cases. The Ag-seeded growths
instead revealed a lower yield of vertical nanowires with large variations
in lengths. Different Ga-concentrations were measured in the different
seed particles, which suggested that the Au and the AgAu seed particles
were liquid during growth, whereas Ag particles were solid. The chemical
potential of Ga was however found to be similar for all three seed
materials. We propose that the Ga concentrations are determined by
the chemical potential of Ga, which in turn explains why Ag-seeded
nanowire growth proceeds with a solid particle. Overall, this study
shows that varying the seed material can be a powerful tool to gain
a deeper understanding of particle assisted nanowire growth.