Phase Equilibria of the Cu-Si-Sn System at 700 and 500 °C

Song, Yuanyuan; Su, Xuping; Ya, Liu; Peng, Haoping; Wu, Changjun; Wang, Jianhua

doi:10.1007/s11669-015-0405-3

Cited by 4 publications

(3 citation statements)

References 27 publications

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“…Let us now summarize the differences between majority Cu and majority Sn catalyst compositions and extrapolate the crystallographic and compositional data deduced from Figures and (recorded at room temperature) to the growth temperature of 416 °C in view of the different phase diagrams. ,,− The confrontation with the latter first shows that, in all cases except the very high Cu concentrations, there will be a liquid part in the catalysts during NW growth. Thus, these experiments indicate that SiNW growth using a Cu–Sn bimetallic catalyst is actually a LAVSS process.…”

Section: Resultsmentioning

confidence: 99%

“…33 We finally conclude that, after NW growth, the catalyst NPs obtained with 65 at. % of Cu in the deposit are essentially made of crystalline Cu 6 Sn 5 and Cu 3 Si, which would be solid at the growth temperature, 34,35 with a Sn-rich part, most probably liquid at the growth temperature (eutectic temperature of the Sn−Si system is 227 °C). 36 Let us now summarize the differences between majority Cu and majority Sn catalyst compositions and extrapolate the crystallographic and compositional data deduced from Figures 3 and 4 (recorded at room temperature) to the growth temperature of 416 °C in view of the different phase diagrams.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…We finally conclude that, after NW growth, the catalyst NPs obtained with 65 at. % of Cu in the deposit are essentially made of crystalline Cu 6 Sn 5 and Cu 3 Si, which would be solid at the growth temperature, , with a Sn-rich part, most probably liquid at the growth temperature (eutectic temperature of the Sn–Si system is 227 °C) …”

Section: Resultsmentioning

confidence: 99%

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High Density of Quantum-Sized Silicon Nanowires with Different Polytypes Grown with Bimetallic Catalysts

et al. 2021

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When Si nanowires (NWs) have diameters below about 10 nm, their band gap increases as their diameter decreases; moreover, it can be direct if the material adopts the metastable diamond hexagonal structure. To prepare such wires, we have developed an original variant of the vapor−liquid−solid process based on the use of a bimetallic Cu−Sn catalyst in a plasmaenhanced chemical vapor deposition reactor, which allows us to prevent droplets from coalescing and favors the growth of a high density of NWs with a narrow diameter distribution. Controlling the deposited thickness of the catalyst materials at the subnanometer level allows us to get dense arrays (up to 6 × 10 10 cm −2 ) of very-small-diameter NWs of 6 nm on average (standard deviation of 1.6 nm) with crystalline cores of about 4 nm. The transmission electron microscopy analysis shows that both 3C and 2H polytypes are present, with the 2H hexagonal diamond structure appearing in 5−13% of the analyzed NWs per sample.

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