The phase transition (PT) in phase change materials (PCMs)
can
be triggered by external stimuli, e.g., light or heat, resulting in
a drastic change in their physical properties, such as electrical
resistivity. Due to this rapid PT, PCMs are promising candidates for
various applications, including reconfigurable electronics, photonics,
sensors, and memory devices. Here, a coupled phase-field model was
developed to investigate the effect of mechanical stress as an overlooked
factor on the PT of germanium–antimony–tellurium. The
results suggest that mean compressive stress promotes crystal growth,
while tensile stress hinders crystallization. Moreover, stress alters
the shape of spherical nuclei and promotes the anisotropic growth.
Finally, mushroom-shaped grains can be formed in the high-temperature
regime due to the heterogeneous stress distribution around interacting
nuclei. These findings suggest a pathway for tailoring microstructure
and tuning/controlling crystallization time via mechanical stresses.