Phase-field investigation of the stages in radial growth of core–shell Ge/Ge<sub>1−x</sub>Sn<sub>x</sub> nanowires

Wang, Yanming; Meng, Andrew C.; McIntyre, Paul C.; Cai, Wei

doi:10.1039/c9nr07587a

Cited by 3 publications

(2 citation statements)

References 24 publications

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“…To achieve better control over the quality and yield of the GeSn core–shell nanowires, a better understanding of the nanowire growth mechanisms is critical. For this purpose, Wang et al systematically studied the radial growth of core–shell Ge/Ge 1– x Sn x nanowires, using a phase field model coupled with elasticity. The model successfully captured several important features such as sidewall facets and elastic energy distributions of the nanowires during its growth process and predicted the minimization of chemical potentials as the trigger for initiating the shell growth at given tin concentrations.…”

Section: Fabrication Of Ge1–x Sn X Materialsmentioning

confidence: 99%

“…To achieve better control over the quality and yield of the GeSn core−shell nanowires, a better understanding of the nanowire growth mechanisms is critical. For this purpose, Wang et al 99 systematically studied the radial growth of core− shell Ge/Ge 1−x Sn x nanowires, using a phase field model coupled with elasticity. The model successfully captured The yellow lines are provided as a guide for the eye.…”

Section: Fabrication Of Ge 1−x Sn X Materialsmentioning

confidence: 99%

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Progress on Germanium–Tin Nanoscale Alloys

et al. 2020

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Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap materials for implementation in complementary metal oxide semiconductor (CMOS) and beyond CMOS devices. The lack of a direct band gap in Si and Ge hinders their incorporation into optoelectronic and photonic devices, without the induction of undesirable strain. Alloying of Ge with Sn represents a novel solution to the lack of light emission in group IV compounds, with an indirect-to-direct band gap transition predicted for Ge at a Sn incorporation greater than 6.5 atom %. Recently, the initiatives on the GeSn alloy research have turned its focus to nanoforms to keep on track with the miniaturization of Si-related platforms for application in nano/ optoelectronics, photonics, and energy devices. Here, we review recent advances in the growth and application of Ge 1−x Sn x nanomaterials. An overview of the theoretical band structure calculations for Ge 1−x Sn x and the effect of band mixing is briefly explored to highlight the significance of Sn inclusion in Ge for band gap engineering. Different fabrication methods for growing Ge 1−x Sn x alloy nanostructures are delineated and correlated with thin film growth. This highlights the requirement of low-temperature and kinetically driven nonequilibrium processes for growing these metastable nanoscale alloys. The optical and electrical properties for both Ge 1−x Sn x strain-relaxed one-dimensional (1D) nanostructures and nanoparticles are reported as well as recent key research findings on Ge 1−x Sn x thin films, highlighting the potential application of these materials in photonic, nanoelectronic, and optotelectronic devices.

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Section: Fabrication Of Ge1–x Sn X Materialsmentioning

confidence: 99%

Section: Fabrication Of Ge 1−x Sn X Materialsmentioning

confidence: 99%

Progress on Germanium–Tin Nanoscale Alloys

et al. 2020

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Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires

et al. 2021

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Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Lentz

Woicik

Bergschneider

et al. 2023

Applied Physics Letters

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Short-range atomic order in semiconductor alloys is a relatively unexplored topic that may promote design of new materials with unexpected properties. Here, local atomic ordering is investigated in Ge–Sn alloys, a group-IV system that is attractive for its enhanced optoelectronic properties achievable via a direct gap for Sn concentrations exceeding ≈10 at. %. The substantial misfit strain imposed on Ge–Sn thin films during growth on bulk Si or Ge substrates can induce defect formation; however, misfit strain can be accommodated by growing Ge–Sn alloy films on Ge nanowires, which effectively act as elastically compliant substrates. In this work, Ge core/Ge1−xSnx ( x ≈ 0.1) shell nanowires were characterized with extended x-ray absorption fine structure (EXAFS) to elucidate their local atomic environment. Simultaneous fitting of high-quality EXAFS data collected at both the Ge K-edge and the Sn K-edge reveals a large (≈ 40%) deficiency of Sn in the first coordination shell around a Sn atom relative to a random alloy, thereby providing the first direct experimental evidence of significant short-range order in this semiconductor alloy system. Comparison of path length data from the EXAFS measurements with density functional theory simulations provides alloy atomic structures consistent with this conclusion.

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Phase-field investigation of the stages in radial growth of core–shell Ge/Ge_1−xSn_x nanowires

Abstract: Phase field model is developed to investigate the radial growth of core shell Ge/Ge1−xSnx nanowires via the chemical vapor deposition method. We show that the shell growth speed of these nanowires exhibits three stages.

Cited by 3 publications

References 24 publications

Progress on Germanium–Tin Nanoscale Alloys

Progress on Germanium–Tin Nanoscale Alloys

Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

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Phase-field investigation of the stages in radial growth of core–shell Ge/Ge1−xSnx nanowires

Abstract: Phase field model is developed to investigate the radial growth of core shell Ge/Ge1−xSnx nanowires via the chemical vapor deposition method. We show that the shell growth speed of these nanowires exhibits three stages.

Cited by 3 publications

References 24 publications

Progress on Germanium–Tin Nanoscale Alloys

Progress on Germanium–Tin Nanoscale Alloys

Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

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Phase-field investigation of the stages in radial growth of core–shell Ge/Ge_1−xSn_x nanowires