Phase-field simulation of nonvolatile ferroelectric-domain-wall memory

Abstract

Ferroelectric domain walls differ in their electrical conductivity under different electric and elastic boundary conditions, and this performance can be used to design memories. A phase-field model is developed to explore the effect of elastic, temperature, and toroidal electric fields on the electrical conductivity for a prototype domain-wall memory unit embedded in a center-type quadrant topological domain structure. It shows that the toroidal electric field can switch two states of the domain wall with high and low conductivity repeatedly, and the conductivity can be tuned by the temperature, misfit strain, and thickness. This work might provide significant reference and technical guidance for the design and application of ferroelectric-domain-wall memory.

Surface Effect of Thickness-Dependent Polarization and Domain Evolution in BiFeO3 Epitaxial Ultrathin Films

“…This precautionary measure is taken to guarantee that alterations in the thickness do not influence the extrapolation lengths throughout the simulation. Here, the extrapolation lengths δ 1 = δ 2 and δ 3 are 1 and 0.5 nm, respectively …”

“…Here, the extrapolation lengths δ 1 = δ 2 and δ 3 are 1 and 0.5 nm, respectively. 29 H is the thickness of the BFO FE film. Similarly, we calculate the variation in average FE polarization with thickness, as presented in Figure 5.…”

Solute segregation in a moving grain boundary: a phase-field approach

“…Therefore in this study, we introduce a phase-field model to study monolayer and multilayer GB segregation. Phase-field modelling is an elegant computational tool for microstructure modelling without explicit tracking of interfaces [25][26][27][28][29]. Continuous representation of field variables and a diffuse interface region enable accurate simulation of complex interactions between GBs, surfaces and interphase interfaces.…”