Phase-field simulations of ferroelectric/ferroelastic polarization switching

Wang, Jie; Shi, San-Qiang; Chen, Lei; Li, Yulan; Zhang, Tong Yi

doi:10.1016/j.actamat.2003.10.011

Cited by 315 publications

(186 citation statements)

References 41 publications

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“…2P s E c (ref. 29), where s ij and e ij are the stress and the strain tensors, E i and P i denote the magnitude of the electric field and polarization vectors, respectively, P s and E c are the spontaneous polarization and the coercive field, respectively, and D indicates the change between the initial and the post switching state. No electric field was applied, and the same PZT sample with a thin SRO buffer electrode was used.…”

Section: Resultsmentioning

confidence: 99%

Ferroelastic domain switching dynamics under electrical and mechanical excitations

et al. 2014

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In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr 0.2 ,Ti 0.8 )O 3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

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Section: Resultsmentioning

confidence: 99%

Ferroelastic domain switching dynamics under electrical and mechanical excitations

et al. 2014

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“…According to Landau-Devonshire theory [22] , the remanent strain of a ferroelectric film is approximately proportional to the square of the remanent polarization, it could be written as behavior could also be observed in other simulated works [14,23] . It might be attributed to the insufficient number of domains used in the present study.…”

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confidence: 93%

“…The elastic strain energy density can be divided into three parts: the pure elastic energy density, the energy density from the pure polarization and the electrostrictive coupling energy density: (15) where C ij in the energy function should be the components of the elastic stiffness tensor, the coefficients β ij are called electricstrictive constants for constant stress. The coefficients β ij and q ij could be written as: 13 For convenience of simulations, the set of normalized and dimensionless variables, as described in the literature [14] , is employed in the present simulation.…”

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Three-Dimensional Phase Field Simulations of Hysteresis and Butterfly Loops by the Finite Volume Method

Chen

et al. 2015

Chinese Phys. Lett.

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Three-dimensional (3D) simulations of ferroelectric hysteresis and butterfly loops have been carried out based on solving the time dependent Ginsburg-Landau equations by using a finite volume method. The influence of externally mechanical loadings with a tensile strain and a compressive strain on the hysteresis and butterfly loops has been studied numerically. The 3D ferroelectric domain formation and its evolution have also been presented in the paper. The simulation results successfully reveal the macroscopically nonlinear response to the applied stresses and electric field. 77.80.Dj, 78.20.Bh Ferroelectricity is one of the fastest growing fields during the past several decades. Interest in this field is attributable to the increasing numbers of practical applications in micro-electromechanical systems, microwave devices, and memory PACS:

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“…The phase-field simulation method of the structural phase transition in ferroelectric materials and the polarization domain exchanges by external electric field has been proposed by Li et al, [9][10][11] where the material employed for calculation was the lead zirconate titanate (PZT) thin film. Recently, the temperature-strain phase diagram for BaTiO 3 thin films was also calculated based on the phasefield method.…”

Section: Introductionmentioning

confidence: 99%

Phase-Field Simulation of Ferroelectric Domain Microstructure Changes in BaTiO<SUB>3</SUB>

Koyama

Onodera

2009

Mater. Trans.

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Phase-field method has recently been extended and utilized across many fields of materials science. Since this method can systematically incorporate, the effect of coherency strain induced by lattice mismatch and applied stress as well as external electrical and magnetic fields, it has been applied to many material processes including solidification, solid-state phase transformations, and various types of complex microstructure changes.In this article, we focus on the ferroelectric domain microstructure changes followed by the structural phase transition from cubic to tetragonal phase in BaTiO 3 , and its morphological developments are simulated on the basis of the phase-field method. The circuit structure of polarization moments of ferroelectric domains including twin defects is simulated, and the domain morphology is controlled by both the electric dipole-dipole interaction among polarization moments and the elastic interaction among domains with different tetragonal distortion. The ferroelectric domain exchange induced by external electric field is also simulated, then the dielectric property, i.e., the polarization hysteresis curve, is calculated by integrating all the x components of polarization moment vector over the microstructure. Furthermore, the simulation of the reversible ferroelectric domain switching, which is a new phenomenon recently discovered by Ren, is also simulated as an advanced application of the present simulation model.

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Phase-field simulations of ferroelectric/ferroelastic polarization switching

Cited by 315 publications

References 41 publications

Ferroelastic domain switching dynamics under electrical and mechanical excitations

Ferroelastic domain switching dynamics under electrical and mechanical excitations

Three-Dimensional Phase Field Simulations of Hysteresis and Butterfly Loops by the Finite Volume Method

Phase-Field Simulation of Ferroelectric Domain Microstructure Changes in BaTiO<SUB>3</SUB>

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