Phase formation between codeposited CoTa thin film and single-crystal silicon substrates

Briskin, G.; Talianker, M.

doi:10.1016/s0040-6090(96)08819-0

Cited by 9 publications

(6 citation statements)

References 31 publications

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“…There are also other indications that TaSi 2 formation occurs at a faster rate on Si (1 1 1) substrates, e.g. in the Co-Ta system [12,13]. Thus, it may be concluded that at high temperatures substrate orientation is the main cause of the faster reaction rates of TaSi 2 formation on Si(1 1 1) compared to that observed on Si(1 0 0) Let us now apply the 1223 K results from Ref.…”

Section: Structural Evaluation Of the Specimens: Influence Of Substramentioning

confidence: 82%

Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

Rosenberg

Sinder

2011

Acta Materialia

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Section: Structural Evaluation Of the Specimens: Influence Of Substramentioning

confidence: 82%

Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

Rosenberg

Sinder

2011

Acta Materialia

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“…7 Besides, glassy Ta-Co thin film prepared by electron gun deposition is found to have a crystallization temperature of 600°C. 8 Crystallization and diffusion barrier characteristics of amorphous Ta-Ni thin films for Cu metallization have not yet been reported. Therefore, this work examines the thin-film properties and diffusion barrier behavior of thin Ta-Ni sputtered films, aiming at depositing highly crystallization-resistant and highly conductive diffusion barriers for copper metallization in integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

Crystallization and failure behavior of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization

Fang

Hsu

Chen

2004

Journal of Elec Materi

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This work examines the thin-film properties and diffusion barrier behavior of sputtered Ta-Ni films, aiming at depositing highly crystallization-resistant and conductive diffusion barriers for Cu metallization. Structural analysis indicates that the as-deposited Ta-Ni films indeed have a glassy structure and are free from highly resistive intermetallic compounds. Examining Si/Ta-Ni/Cu stacked samples reveals that thermally induced failure of amorphous Ta-Ni barriers is triggered by the barrier's reaction with the silicon substrate at temperatures around 700°C. The effectiveness of the amorphous Ta-Ni thin film thus can be substantially enhanced by effectively blocking diffusion of copper toward the underlying silicon.

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“…12 Besides, glassy Ta-Co thin film prepared by electron gun codeposition is found to have a crystallization temperature at 500°C. 13 Our previous study has also shown that electron-gun-evaporated Ta-Co and sputtered Ta-Ni thin films indeed have an amorphous structure, and are free from intermetallic compounds up to 500°C and 700°C. 14 A superior barrier characteristic for evaporated Ta-Co and sputtered Ta-Ni thin films in preventing Cu diffusion can also be found up to annealing temperatures of 500°C and 700°C.…”

Section: Introductionmentioning

confidence: 86%

Crystallization and failure behavior of Ta-TM (TM=Fe, Co) nanostructured/amorphous diffusion barriers for copper metallization

Fang

Hsu

Chen

2006

Journal of Elec Materi

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This work examined the thin-film properties and diffusion barrier behavior of sputtered Ta-TM (TM ‫ס‬ Fe, Co) films, aiming at depositing a highly crystallization-resistant and conductive diffusion barrier film for Cu metallization. Four-point probe measurement, x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a secondary ion mass spectrometer (SIMS) were used to examine the barrier properties. Structural examination indicated that intermetallic-compound-free amorphous Ta-TM films were obtained by magnetron sputtering, thus giving a resistivity of 146.82 ⍀-cm and 247.01 ⍀-cm for Ta 0.5 Fe 0.5 and Ta 0.5 Co 0.5 films, respectively. The Si/Ta 0.5 Fe 0.5 /Cu and Si/Ta 0.5 Co 0.5 /Cu stacked samples were observed to fail completely at temperature above 650°C and 700°C because of the formation of Cu 3 Si protrusions between silicon and the Ta-TM interface. Ta 0.5 Co 0.5 is thus superior to Ta 0.5 Fe 0.5 in preventing copper from diffusion. Highly thermally stabilized amorphous Ta-TM thin film can thus be potentially adopted as a diffusion barrier for Cu metallization.

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Phase formation between codeposited CoTa thin film and single-crystal silicon substrates

Cited by 9 publications

References 31 publications

Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

Crystallization and failure behavior of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization

Crystallization and failure behavior of Ta-TM (TM=Fe, Co) nanostructured/amorphous diffusion barriers for copper metallization

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