The application of thin CrNi films as resistor networks in microelectronics has generated a spate of studies designated to promote a better understanding of the relationships among the deposition conditions, film structure and resulting electrical properties .Among the papers that had a particular significance was Campbell and Hendry's study [1] of how the electrical properties depended on CrNi alloy composition, which led to mainly restricting the choice of the thin-film resistor composition in the range from 40 to 60at% Cr. They also tried to explain the electrical properties by a macroscopic two-phase model characterized by the mixture of an oxygenfree CrNi metal phase and the Cr203 oxide phase. Most of the earlier papers dealing with CrNi thin-film resistors [2-5, 8, 9, 12, 14, 15, 22] also adopted this model to explain the electrical behaviour of asdeposited and also annealed thin films. Mooij and De Jong [6], summarizing their experimental results on triode-sputtered CrNi thin films on glass substrates at temperatures below 80 °C, noticed that: (i) in CrNi thin films the electrical resistivity is constant and the temperature coefficient of electrical resistivity (TCR) is low in the composition range 20-80% Cr, as in bulk CrNi alloys; and (ii) the electrical resistivity appears to be insensitive to changes in the crystallographic structure (£c.c., b.c.c., X phase or amorphous). In a tentative explanation of these electrical conduction properties, they have assumed that the disorder in these alloys leads to a minimum mean free path of the conduction electrons which is close to the interatomic distance.Recently, Dintner et al. [23,24] carried out measurements of the d.c. conductivity at low temperatures of NiCr-O thin films reactively sputtered under various deposition conditions. They concluded that the disorder was mainly chemical as a result of oxygen incorporation, and the d.c. conductivity at low temperatures could be interpreted in terms of weakly localized electrons and their interaction in a highly disordered metallic system. Our recent [25,26,28] TED and TEM structural investigations performed on r.f.-sputtered CrNi (65:35, 50:50 and 20:80) thin films revealed a complex dependence of the resulting phases (single amorphous phase, two amorphous phases, nanocrystalline multiphase stable solid solutions, nanocrystalline multiphase segregated solid solutions, etc.) on the chosen deposition parameters (substrate tempera-0261-8028 © 1996 Chapman &Hall ture 293, 423, 473, 523, 573 and 623 K and argon gas pressure 30, 150, 300 and 600 mtorr). Electrical resistance measurements performed in the temperature range from 273 to 77 K on CrNi (65:35) thin films sputtered at high argon pressure (600 mtorr) and at various substrate temperatures (423,473, 523 and 573 K) gave us the possibility of determining, the influence of topological disorder in the temperature dependence of the electrical resistance [29].In this work we present structural and electrical resistance data on measurements performed in the range from ...