Phase formation in the Ni/n–InP contacts for heterogeneous III/V-silicon photonic integration

Ghegin, E.; Nemouchi, F.; Lábár, János L.; Perrin, C.; Hoummada, K.; Favier, S.; Gurban, S.; Sagnes, I.

doi:10.1016/j.mee.2015.12.008

Cited by 13 publications

(9 citation statements)

References 5 publications

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“…7). We also highlighted that an Ar preclean removes efficiently the oxides present on such surfaces but modifies their crystallinity and stoichiometry [6], [8]. On the contrary, diluted H2SO4 and HCl solutions combined with a He preclean seems to be a more adapted compromise for the preparation of InP surfaces (Fig.…”

Section: Contact Metallization 1) Cavities Opening and Iii-v Surfamentioning

confidence: 89%

“…A similar study on the Ni/InP system underlined the appearance of various phases (Ni2P, Ni3P and Ni2InP) based on different applied thermal treatments and the formation of the In phase from 350 °C (Fig. 8) [8]. The two contacts (i.e., on n-InP and p-InGaAs) being sequentially integrated in the laser device, thermal budget constraints have to be respected during the making of the second-stage contacts.…”

Section: ) Cmos-compatible Contact Metallisationmentioning

confidence: 89%

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Towards contact integration for III–V/Silicon heterogeneous photonics devices

Ghegin

Rodriguez

Nemouchi

et al. 2016

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)

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Abstract-Silicon photonics is of great interest as it opens the way to large bandwidth and high data rates. A pioneer Silicon photonics scheme consists in integrating III-V lasers on the SOI substrates containing the passive components. However, key developments are necessary to co-integrate III-V devices with CMOS very large scale integration (VLSI). In this paper we propose a CMOS-compatible integration scheme of contacts (i.e. semiconductor metallization and plug) on III-V surfaces taking into account the limitations fixed by the operating laser device. Based on metallurgical, morphological, optical and electrical studies, processes are submitted and reviewed for the purpose of forming stable and reproducible contacts with low resistivity in a 200 millimeters fab line.

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Section: Contact Metallization 1) Cavities Opening and Iii-v Surfamentioning

confidence: 89%

Section: ) Cmos-compatible Contact Metallisationmentioning

confidence: 89%

Towards contact integration for III–V/Silicon heterogeneous photonics devices

Ghegin

Rodriguez

Nemouchi

et al. 2016

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)

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“…It, therefore, appears that this kind of plasma leads to a phosphorus depletion of the InP surface consistently with what was previously reported in the literature. [10][11][12][13] The region situated below this In-rich area appears to be P-rich over a few nanometers. afterwards because of the TiN layer discontinuity.…”

Section: Discussionmentioning

confidence: 99%

“…Studies concerning the effect of these surface preparations showed that both treatments modify the InP surface's stoichiometry. [10][11][12][13][14] A. Impact of the InP surface preparation…”

Section: Discussionmentioning

confidence: 99%

“…An amorphous layer of about 10 nm is also identified, similarly to the results reported in a previous study. 13 Because of the important roughness, the corresponding AES depth profile is highly smeared and the signals emanating from the InP, the amorphous layer, and the TiN top layer are not clearly distinct. Nonetheless, a compositional gradient can be observed in the profile.…”

Section: Discussionmentioning

confidence: 99%

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Phase formation sequence in the Ti/InP system during thin film solid-state reactions

Ghegin

Rodriguez

Lábár

et al. 2017

Journal of Applied Physics

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International audienceThe metallurgical properties of the Ti/InP system meet a great interest for its use as a contact in the scope of various applications such as the Si Photonics. The investigations conducted on this system highlight the initiation of a reaction between the Ti and the InP substrate during the deposition process conducted at 100 °C. The simultaneous formation of two binary phases, namely, Ti$_2$In$_5$ and TiP, is attributed to the compositional gradient induced in the InP by the wet surface preparation and enhanced by the subsequent $in situ$ Ar$^+$ preclean. Once formed, the TiP layer acts as a diffusion barrier inhibiting further reaction up to 450 °C in spite of the presence of an important Ti reservoir. At higher temperature, however, i.e., from 550 °C, the reaction is enabled either by the enhancement of the species diffusion through the TiP layer or by its agglomeration. This reaction gives rise to the total consumption of the Ti$_2$In$_5$ and Ti while the TiP and In phases are promoted

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