Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

Abstract

Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping Appl. Phys. Lett. 101, 153505 (2012) Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors Appl. Phys. Lett. 101, 153504 (2012) Hybrid vertical transistor based on controlled lateral channel overflow J. Appl. Phys. 112, 074509 (2012) Field-effect diode based on electron-induced Mott transition in NdNiO3 Appl. Phys. Lett. 101, 143111 (2012) Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

“…The steepness of a switch is defined as the minimum gate voltage required for a 10-fold increase in the drain current, known as the subthreshold swing (SS). , The SS cannot be lower than 60 mV/decade at 300 K in a conventional metal oxide semiconductor field-effect transistor (MOSFET) or any device using the carrier injection mechanism over an energy barrier as the operation principle . To overcome the so-called ”Boltzmann Tyranny”, steep switching devices such as tunnel FETs (TFETs), , impact ionization MOSFETs (I-MOSFETs), , nanoelectromechanical field-effect transistors (NEMFETs), , and negative capacitance (NC) MOSFETs − with a sub-60 mV/decade swing have been extensively studied. TFETs have attracted much attention for achieving a steep SS value by employing quantum-mechanical band-to-band tunneling (BTBT) of careers from source to the channel .…”

“…5,6 The SS cannot be lower than 60 mV/decade at 300 K in a conventional metal oxide semiconductor field-effect transistor (MOSFET) or any device using the carrier injection mechanism over an energy barrier as the operation principle. 7 To overcome the so-called "Boltzmann Tyranny", steep switching devices such as tunnel FETs (TFETs), 8,9 impact ionization MOSFETs (I-MOS-FETs), 10,11 nanoelectromechanical field-effect transistors (NEMFETs), 12,13 and negative capacitance (NC) MOS-FETs 14−17 channel. 18 However, the on-current of TFETs is unacceptably low for a technology that would like to replace CMOS.…”

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

“…Hence, it is urgent to develop novel prototype devices that can break the thermionic limit of SS to achieve sub-60 mV dec −1 . [3,4] To this end, several steep-slope device systems such as nanoelectromechanical FETs (NEMFETs), [5,6] tunnel FETs (T-FETs), [7,8] Dirac-source FETs (DS-FETs), [9] impact ionization FETs (II-FETs), [10] and negativecapacitance FETs (NC-FETs) [11][12][13][14][15][16][17][18] have been proposed and developed to realize sub-60 mV dec −1 SS potentially. For instance, compared with MOSFET, normal dielectric materials are replaced by ferroelectric/dielectric systems in NC-FETs to achieve low SS below 60 mV dec −1 under the condition of capacitance matching.…”

Frequency fluctuations in silicon nanoresonators

“…Interestingly, this observation holds true from MEMS to CNT resonators, even though dynamic range decreases with device size 27 ; the best linear fits of both experimental stability and thermomechanical limit scale similarly for all device types at ∼ 𝑚 −1 2 ⁄ . The discrepancy has been noted across a large variety of designs and resonating modes: of the 25 datapoints, 6 correspond to flexural mode in clamped-free beams 16,[28][29][30][31][32] , 15 correspond to flexural mode in clamped-clamped beams (3 of which were tensile stressed) 6,11,22,[33][34][35][36][37][38][39][40][41][42][43] , 2 correspond to flexural mode in pinned beams 35,44 , and 2 correspond to flexural mode in thin membranes 45,46 . Similarly, no differences due to transduction techniques, optical detection 22,29,30,32,42,43 , capacitive 40,41,46 , magnetomotive [36][37][38] , piezoelectric 31,44 , piezoresistive 16,34,35,39 or field-effect-modulated conductance…”

“…The frequency stability and limit-of-detection for a device are commonly predicted based on the dynamic range (DR) measured [10][11][12] (ratio between maximum driven signal level and noise floor expressed in dB) by applying the simple formula 13,14 , 〈 0 〉 = 1 2 10 − 20 . Additive phase noise generally comes from the device being coupled to a thermal bath.…”