Integrated
nonlinear metasurfaces leading to high-efficiency optical
second harmonic generation (SHG) are highly desirable for optical
sensing, imaging, and quantum photonic systems. Compared to traditional
metal-only metasurfaces, their hybrid counterparts, where a noncentrosymmetric
nonlinear photonic material is incorporated in the near-field of a
metasurface, can significantly boost SHG efficiency. However, it is
difficult to integrate such devices on-chip due to material incompatibilities,
thickness scaling challenges, and the narrow band gaps of nonlinear
optical materials. Here, we demonstrate significantly enhanced SHG
in on-chip integrated metasurfaces by using nanometer thin films of
ferroelectric Y:HfO2. This material has the merit of CMOS
compatibility, ultraviolet transparency up to 250 nm, and significant
scalability down to sub-10 nm when deposited on silicon. We observe
a 20-fold magnitude enhancement of the SHG intensity from the hybrid
metasurface compared to a bare ferroelectric HfO2 thin
film. Moreover, a 3-fold SHG enhancement is observed from the hybrid
metasurface compared to a control structure using nonferroelectric
HfO2, demonstrating a major contribution to the SHG signal
from ferroelectric Y:HfO2. The effective second-order nonlinear
optical coefficient χ(2) of Y:HfO2 is
determined to be 6.0 ± 0.5 pm/V, which is comparable to other
complex nonlinear photonic oxide materials. Our work provides a general
pathway to build an efficient on-chip nanophotonic nonlinear light
source for SHG using ferroelectric HfO2 thin films.