The contact, and thus the hole collection
between Cu2ZnSnSe4 (CZTSe) and Mo, is a crucial
issue to improve
the performance of CZTSe solar cells. In this work, a method to improve
the back contact is explored by spraying Na3PO4 on the surface of the Mo back contact. With the O provided from
Na3PO4, extra MoO2 and MoO3 are formed at the surface of the back contact, and partial MoO2 is transformed into MoSe2 under high Se2 partial pressure during the selenization process. The formation
of MoSe2 progresses from dispersed spots to a continuous
layer but not from the reaction between CZTSe and Mo. Although a thick
MoSe2 layer is formed, the CZTSe device performance increases
from 7.2% to 8.3% on average. This study affords new insight into
the formation of MoSe2, thus deeply strengthening the understanding
of the back contact of kesterite solar cells and of two-dimensional
chalcogenide devices.