Phase relations in the TiSiC system

Wakelkamp, Wjj Wichard; Loo, van Fjj Frans; Metselaar, R Ruud

doi:10.1016/0955-2219(91)90067-a

Cited by 137 publications

(64 citation statements)

References 4 publications

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“…In the case of the cloud-like reaction layer volumes in between the TiC grains can become enclosed, preventing the rejection of an excess Si into the melt pool. In the enclosed volumes the Si concentration is subsequently raised suciently to nucleate at the interface between TiC and SiC the phase Ti 3 SiC 2 , in accordance with the ternary Ti±Si±C phase diagram (which is only known for the temperature range 1100±12508C [15,20,21]). This sequence of a primary TiC nucleation followed by a nucleation of Ti 3 SiC 2 can be expected because the melting point of TiC is probably highest, that is to say: 30618C for TiC, 25458C for SiC and a melting point for The present sequence of primary TiC formation followed by Ti 3 SiC 2 at the``interface'' between TiC and SiC if sucient supersaturation with Si occurs, Fig.…”

Section: Ti 3 Sic 2 Plates In the Reaction Layermentioning

confidence: 99%

Reaction layers around SiC particles in Ti: an electron microscopy study

et al. 1999

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AbstractÐA detailed description is given of the microstructure of the top layer of Ti±6Al±4V with SiC particles embedded with a high-power Nd:Yag laser system. Scanning electron microscopy (SEM), as well as conventional, analytical and high-resolution transmission electron microscopy (TEM) were used. An existing controversy about the presence or absence of Ti 3 SiC 2 in the reactive SiC/Ti systems is clari®ed and the ®rst observations of Ti 5 Si 3 precipitation on stacking faults in Si supersaturated TiC are reported. The Si released during the reaction SiC+Ti4TiC+Si results in the formation of Ti 5 Si 3 . If in the reaction layer regions in between the TiC grains become enclosed, the rejected Si content increases locally and Ti 3 SiC 2 plates with dominant (0001) facets nucleate. In the TiC grains particularly of the cellular reaction layer, a high density of widely extending stacking faults of the order of 100 nm is observed and on these faults in many instances small Ti 5 Si 3 precipitates are present. #

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Section: Ti 3 Sic 2 Plates In the Reaction Layermentioning

confidence: 99%

Reaction layers around SiC particles in Ti: an electron microscopy study

et al. 1999

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“…1 Indeed, the Ti 3 Si (86) phase was observed in the hypereutectoid Ti-Si alloys with silicon content from 1.5 to 15.3 wt.% (2.6 to 26 at.%) after long-term heat treatments at sufficiently high temperatures [13][14][15][16]; see Table 1. Existence of the Ti 3 Si (86) phase in the Ti-Si system was also confirmed by Kozlov and Pavlyuk [17] on the binary Ti-Si alloys annealed at 670 K for 720 h.…”

Section: Introductionmentioning

confidence: 99%

Ab initio-based prediction and TEM study of silicide precipitation in titanium

Poletaev¹,

Липницкий²,

Kartamyshev³

et al. 2014

Computational Materials Science

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a b s t r a c tThe literature contains many contradictory data about the most thermodynamically favorable structure of precipitates in a-Ti matrix of the hypoeutectoid Ti-Si alloys. In this work we applied our recently developed thermodynamic model to predict the structure of Ti-Si precipitates in a-Ti matrix of the TiSi alloy with total Si concentration of 0.7 wt.%. We considered all prominent Ti-Si phases such as Ti 3 Si; Ti 5 Si 3 ; Ti 5 Si 4 ; TiSi and two TiSi 2 phases and discovered that formation of the Ti 5 Si 3 phase is more favorable than that of the Ti 3 Si in contradiction with the known phase diagrams. Theoretical result was confirmed by experimental investigation of microstructure and phase composition of the model Ti-0.7Si alloy annealed at 873 K for 10 h. Indeed, the only observed phase has hexagonal Ti 5 Si 3 structure. To ensure the completeness of the results we calculated ab initio elastic constants for all considered Ti-Si phases.

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“…This is consistent with the experimental results. The phase diagrams 35,36) different in the constitutional range of Ti 3 SiC 2 phase from the diagram shown in Fig. 8 were also presented.…”

Section: Microstructurementioning

confidence: 99%

Synthesis of TiB2-TiC-Ti3SiC2 Composites by Reactive Hot Pressing of B4C-SiC-Ti Powder Mixtures

Taimatsu

Sugiyama²,

Koseki

2008

Mater. Trans.

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TiB 2 -TiC-Ti 3 SiC 2 composites were reaction-sintered from B 4 C-xSiC-(3 þ 2x)Ti (x ¼ 0 to 1) powder mixtures using reactive hot pressing, and the phase relation of reaction products and sintering behavior were investigated. The reactionSiC 2 proceeded fundamentally during hot pressing. Although the reaction demands no production of TiC phase at x ¼ 1, TiC phase was formed due to the nonstoichiometry of TiC and Ti 3 SiC 2 phases produced. The hot-pressed composites containing the layered compound Ti 3 SiC 2 had no preferential texture. Both TiB 2 and TiC were first produced near 960 C during heating, and then Ti 3 SiC 2 near 1200 C. The product Ti 3 SiC 2 contributed effectively to the densification of the composites above 1450 C.

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Phase relations in the TiSiC system

Cited by 137 publications

References 4 publications

Reaction layers around SiC particles in Ti: an electron microscopy study

Reaction layers around SiC particles in Ti: an electron microscopy study

Ab initio-based prediction and TEM study of silicide precipitation in titanium

Synthesis of TiB<SUB>2</SUB>-TiC-Ti<SUB>3</SUB>SiC<SUB>2</SUB> Composites by Reactive Hot Pressing of B<SUB>4</SUB>C-SiC-Ti Powder Mixtures

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