Phase relationships in the Al-Ta system

Subramanian, P. R.; Miracle, Daniel B.; Mazdiyasni, Siamack

doi:10.1007/bf02671926

Cited by 45 publications

(40 citation statements)

References 4 publications

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“…As a result, the phase diagram calculated using the thermodynamic parameters from [13] (Fig. 1) is close to the preliminary version of Mahne et al [19] (repeating that of Schuster [20]), and it also differs from the phase diagrams of Subramanian et al [14] and Kaufman [12]. Besides, the description of Du and Schmid-Fetzer [13] leads to some solid phases decomposing at temperatures lower than room temperature (see Fig.…”

Section: Introductionmentioning

confidence: 53%

“…The phase diagram calculated by Kaufman differs from the experimental one from Subramanian et al [14], accepted in handbooks [15,16], by congruent melting of the compounds TaAl 2 and TaAl 3 . The thermodynamic assessment of Du and Schmid-Fetzer [13] is based on a larger number of literature data and includes the data of Mahne et al [17][18][19], those were given a large weight.…”

Section: Introductionmentioning

confidence: 86%

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Experimental study and thermodynamic re-assessment of the binary Al–Ta system

et al. 2010

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Section: Introductionmentioning

confidence: 53%

Section: Introductionmentioning

confidence: 86%

Experimental study and thermodynamic re-assessment of the binary Al–Ta system

et al. 2010

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“…The existence of the AlTa phase instead of the Al 2 Ta phase for the three above-mentioned alloys is not consistent with the available phase diagram. 4,7 The results of the equilibrium phases of the alloys annealed at 750°C, 850°C, 900°C, and 1000°C are summarized in Table I. The results all indicate that there is no Al 2 Ta when the annealing temperature is above 850°C.…”

Section: Resultsmentioning

confidence: 92%

“…4-7 Kimura et al 5 first determined the phase Al 3 Ta to have ah omogeneity range extending from 23at.%Ta to 32at.%Ta. Schuster 6 reported that phase Al 3 Ta was aline compound and the alloys with the tantalum contents between 25 and 43 at.% contained two phase mixtures of Al 3 Ta and Al 3 Ta 2 .Subramanian et al 7 also proposed that the phase Al 3 Ta was aline compound and the alloys between 25 at.% Ta and 33 at.% Ta were two-phase mixtures of Al 3 Ta and Al 2 Ta. Fig.…”

Section: Resultsmentioning

confidence: 95%

Interfacial reactions and phase equilibria in the Al-Cu/Ta systems

Chou

Chen

2006

Journal of Elec Materi

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Thermal inkjet technology is in widespread use for color printers. In the roofshooter thermal inkjet printhead, tantalum is often used as the diffusion barrier between the gold and the conduction layers, Al, Cu, and Al-Cu. This study investigated the contact stabilities of Al/Ta, Cu/Ta, and Al-Cu/Ta systems using the reaction couple technique. The couples were annealed in af urnace at 600°C, 750°C, 900°C, 1000°C, and 1200°C for various lengths of time. One reaction layer, the Al 3 Ta phase, was formed at the interface in the Al/Ta and Al-Cu/Ta couples heat treated at 750°C, 900°C, and 1000°C. No Cu is observed in the Al 3 Ta phase even in the Al-Cu/Ta couples; however, the reaction couples with Al-Cu have slower reaction rates. For the Al/Ta reaction couples annealed at 600°C and Cu/Ta couples annealed at 750°C, 900°C, 1000°C, and 1200°C, no noticeable interfacial reaction was observed. It was concluded that the contacts were very stable and Ta was av ery good barrier layer. In addition, phase equilibria studies of the Al-Ta system were carried out. The experimental results indicate that the Al 2 Ta phase was not stable at 850°C and higher. A revised Al-Ta phase diagram was proposed in this study.

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“…The bulk AlTa intermetallic compound has a monoclinic crystal structure (Mahne et al 1993) and a peritectic melting point of 1,770 • C (Subramanian et al 1990), while sputterdeposited equi-atomic AlTa often has an amorphous structure (Su and Chung 2005). Not much is known about its mechanical properties in either form.…”

Section: Resultsmentioning

confidence: 97%

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings

et al. 2007

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An experimental technique is presented for measuring the fracture toughness of brittle thin films. In this technique, long rectangular membranes are fabricated from the film of interest using standard silicon micromachining techniques. A focused ion beam is then used to introduce pre-cracks of different lengths along the centerline of the membranes and the membranes are pressurized until rupture. The fracture stress of the membrane is measured as a function of pre-crack length and the fracture toughness of the film is determined from a simple fracture mechanics analysis. The technique is applicable to a wide range of materials and is especially suited for ultra-thin films. We have demonstrated the experimental procedure for a 150 nm AlTa intermetallic film and obtained a room-temperature fracture toughness of K 1c = 4.44 ± 0.21 MPam 1/2 .

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Phase relationships in the Al-Ta system

Cited by 45 publications

References 4 publications

Experimental study and thermodynamic re-assessment of the binary Al–Ta system

Experimental study and thermodynamic re-assessment of the binary Al–Ta system

Interfacial reactions and phase equilibria in the Al-Cu/Ta systems

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings

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