We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of 0 to π transition. These CPR consist of two independent branches corresponding to 0− and π− states of the contact. We have found that depending on the transparency of the SIs tunnel barrier the decrease of the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference ϕ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as 10% under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed. PACS numbers: 74.45.+c, 74.50.+r, 74.78.Fk, 85.25.Cp Josephson junctions with ferromagnetic (F) layers in weak link region are considered as promising control elements in a superconducting memory compatible with RSFQ logic circuits 1-6 . The presence of two or more ferromagnetic layers in the weak-coupling region makes it possible to control the magnitude of the critical current J C of these junctions by changing of mutual orientation of F films magnetization vectors 7-13 . It is necessary to mention that the large number of ferromagnetic layers in the weak-coupling area is accompanied by degradation of J C by virtue of the larger number of interfaces in the structure, and owing to the strong suppression of superconducting correlations in each of the F layers.In [14][15][16][17][18][19] it was shown that the required changes in J C can also be ensured in SFS or SIsFS structures with single ferromagnetic layer. The remagnetization of the ferromagnetic layer in these junctions shifts the position of the maximum in Fraunhofer-like dependence of J C on external magnetic field resulting in changing of J C magnitude at zero field. This principle was extended in magnetic rotary valves 20,21 where the switching effect in J C magnitude was achieved by changing the direction of the inplane F film magnetization.It should be noted that magnetization reversal processes significantly increase the characteristic response time of the SFS control memory elements in comparison with the characteristic switching time of Josephson contacts in SFQ logic circuits. In order to overcome this drawback, it was suggested in 22 to use SIs-F/N-S contacts, where thin s-layer can be subdivided on superconducting domains with a phase shift of π. However, the implementation of the above mentioned proposals is a rather complicated technological task.The promising concept of the Josephson memory with electrical control can be also realized using the phenomenon of the coexistense of the two metastable states in the vicinity of 0π transition 23,24 . For instance, these states can be achieved inside the region of the 0 − π transition of the junction with ferromagnetic layer [25][26][27][28] or in the junctions with two uncollinearlly magnetized hard ferromagnets 29,30 . The conditions for the ex...