2013
DOI: 10.1016/j.jssc.2013.04.032
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Phase separation and antisite defects in the thermoelectric TiNiSn half-Heusler alloys

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Cited by 122 publications
(77 citation statements)
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“…The formation energy associated with adding Ni to the vacancy sublattice to HH ZrNiSn and HfNiSn is higher than that of adding Ni vacancies to FH ZrNi 2 Sn and HfNi 2 Sn, indicating that vacancy defects in the FH is less costly than Ni defects in HH structures. 33 The formation energies of the TiNi 1+x Sn system, in contrast, are far more symmetrical. Figure 2 also shows formation energies predicted with the cluster expansion for Ni-vacancy arrangements in larger supercells than those calculated with DFT.…”
Section: Results and Analysismentioning
confidence: 99%
“…The formation energy associated with adding Ni to the vacancy sublattice to HH ZrNiSn and HfNiSn is higher than that of adding Ni vacancies to FH ZrNi 2 Sn and HfNi 2 Sn, indicating that vacancy defects in the FH is less costly than Ni defects in HH structures. 33 The formation energies of the TiNi 1+x Sn system, in contrast, are far more symmetrical. Figure 2 also shows formation energies predicted with the cluster expansion for Ni-vacancy arrangements in larger supercells than those calculated with DFT.…”
Section: Results and Analysismentioning
confidence: 99%
“…Several classes of thermoelectric materials, such as skutterudite [5,6], tellurides [7][8][9][10], half-Heuslers [11,12], and silicides [13,14], have been modified to reach high ZT value. Recently, ternary diamond-like semiconductor of Cu 2 SnSe 3 has emerged as a new potential thermoelectric material due to its relatively high carrier mobility and quite low thermal conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…10 Concerning bulk oxidation, threshold temperatures have been determined, above which MgO (723 K), SiO 2 (1000 K) and Mg 2 SiO 4 (1270 K) can form within bulk Mg 2 Si. 4,5 Production techniques for Mg 2 Si are numerous, among them spark plasma sintering (SPS) 11 or fieldactivated and press-assisted sintering (FAPAS). 12,13 In this study, bulk Mg 2 Si-based TE materials are produced through hot extrusion.…”
Section: Introductionmentioning
confidence: 99%