Phase separation on solid surfaces: nucleation, coarsening and coalescence kinetics

Zinke-Allmang, M.

doi:10.1016/s0040-6090(98)01479-5

Cited by 150 publications

(94 citation statements)

References 334 publications

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“…6 are combined in Young's equation [11] γ sv = γ sd + γ dv cosβ (1) where β is the contact angle. A slight modification of the surface energy on any of the interfaces would favour one of three possible growth modes: Islanding (Volmer-Weber), layer-bylayer (Frank-Van der Merwe), or layer-plus-island growth mode (Stranski-Krastanov) [11,41]. Islanding occurs without wetting when γ sv is less than γ sd and γ dv combined, expressed as [41] γ sv < γ sd + γ dv (2) However if the reverse is the case, Eq.…”

Section: Nano Resmentioning

confidence: 99%

“…A slight modification of the surface energy on any of the interfaces would favour one of three possible growth modes: Islanding (Volmer-Weber), layer-bylayer (Frank-Van der Merwe), or layer-plus-island growth mode (Stranski-Krastanov) [11,41]. Islanding occurs without wetting when γ sv is less than γ sd and γ dv combined, expressed as [41] γ sv < γ sd + γ dv (2) However if the reverse is the case, Eq. (3) is satisfied, the layer wets the substrate, and layer-by-layer growth ensues [41] γ sv ≥ γ sd + γ dv (3)…”

Section: Nano Resmentioning

confidence: 99%

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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

et al. 2014

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The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and without antimony (Sb) flux. It is demonstrated that trace amounts of Sb flux are capable of tuning the geometry of NWs, i.e., enhancing lateral growth and suppressing axial growth. We attribute this behavior to the surfactant effect of Sb which results in modifications to the kinetic and thermodynamic processes. A thermodynamic mechanism that accounts for Sb segregation in InAsSb NWs is also elucidated. This study opens a new route towards precisely controlled NW geometries by means of Sb addition.

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Section: Nano Resmentioning

confidence: 99%

Section: Nano Resmentioning

confidence: 99%

Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

et al. 2014

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“…Where, the nanostructures contain This ordering is a direct consequence of Ostwald ripening phenomena, where the bigger islands grow further at the cost of the smaller ones. In post deposition conditions where no additional material is being deposited, Ostwald ripening is considered the primary coarsening mechanism for island growth [28]. The role of the Ostwald ripening is reinforced by the existence of depleted regions near the bigger objects.…”

Section: Resultsmentioning

confidence: 99%

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

Molnár

2013

J. Mater. Res.

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A special type of epitaxial growth appears during solid phase thin film reactions, where the reaction product grows epitaxially on the substrate. Some metal silicide layers and nanostructures are known to develop such epitaxial structures. In this study iron silicide was used to study the effect of the growth mode on the epitaxial growth. Strain-induced, self-assembled iron silicide nanostructures were grown on Si(001) substrates by electron gun evaporation of 1.0 nm iron and subsequent annealing at 500-850°C for 60 minutes. The growth processes were checked by reflection high energy electron diffraction, and the formed structures were characterized by scanning electron microscopy and optical microscopy. The iron silicide nanostructures were oriented in square directions epitaxially fitting to the surface of Si(001). The shape and size of the nanostructures depended on the annealing temperature. In some cases the nanoparticles were arranged in circles. This might be the direct consequence of a nucleation controlled type transition of iron monosilicide to iron disilicide phase at nanoscale.

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“…2(e-f)). The local environment of these big objects is depleted as a consequence of Ostwald ripening phenomena, where the bigger islands grow further at the cost of the smaller ones [16]. In case of thicker samples -up to 6 nm initial Fe thickness -the size of aggregated object grows continuously, reaching the 1 micrometer lateral dimensions.…”

Section: Discussionmentioning

confidence: 99%

Iron Silicide Nanostructures Prepared by E-Gun Evaporation and Annealing on Si(001)

et al. 2013

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Iron silicide nanostructures were grown on Si(001) by strain-induced, self-assembly method. E-gun evaporated iron particles were deposited both onto room temperature and high temperature Si substrates, and were further annealed in situ. The initial Fe thickness was in the 0.1-6 nm range and the annealing temperatures varied between 500 and 850°C. The phases and structures formed were characterized by reflection high energy electron diffraction and by scanning electron microscopy. The electrical characteristics were investigated by I-V and C-V measurements, and by deep level transient spectroscopy. The size distributions of the formed iron silicide nanostructures were not homogeneous but, were oriented in perpendicular directions on Si(001). Higher temperature annealing resulted in increased particles size and faceting. Electrical characteristics showed critical defect concentration related to Fe.

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Phase separation on solid surfaces: nucleation, coarsening and coalescence kinetics

Cited by 150 publications

References 334 publications

Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

Iron Silicide Nanostructures Prepared by E-Gun Evaporation and Annealing on Si(001)

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