Phase slippage driven dissipation and high-field Little-Parks effect in superconducting MoGe nanowire networks formed on nanoporous substrates

Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates

“…This discrepancy, as the similar one reported in Ref. [24], is not surprising since in both cases the behavior of superconducting wire networks is described by models derived for single wires. Fig.…”

“…Moreover recently, the proposed duality between the Josephson junction and the quantum phase slip (QPS) effect [14] strengthened the interest in these low-dimensional systems, which, under appropriate conditions, could show coherent QPS [15] paving the way to the realization of QPS qubit [16,17], QPS transistors [18], as well as quantum current standards [19]. The approach to NWs fabrication became in itself a research field, spanning from ion-beam design [20,21], to molecular templating [22], and deposition inside [23] or on top [24] of nanoporous self-assembled substrates. The latter method, in particular, results to be specially appealing since it allows the fabrication of patterned nanostructures in a single step, rapidly, cheaply, and with high reproducibility on a large scale area.…”

Transport properties in aggregates of Nb nanowires templated by carbon nanotube films

“…2(b). It results that as expected for activation energy and as observed in other template SNW networks [21]. Particular attention should be devoted to the parameter L that in the models represents the length of an individual SNW, but that is not a well-defined quantity in the case of network of SNWs [21].…”

“…The development of high resolution techniques such as electron beam lithography, although expensive, made individual SNWs possible candidates for current standards [11], sensors [12], actuators [13], microwave detectors [14], quantum bits [15][16][17] and other switching devices based on classical and quantum effects. Recently, the same properties of the individual SNWs have been reported for networks of SNWs [18][19][20] obtained by etching process as well as by template methods using porous Si or alumina membranes [21][22][23][24][25]. Among the many methods used to fabricate SNWs, the template technique earned a large success since it allows to obtain SNWs by controlling the growth rate in simple deposition systems such as sputtering.…”

“…However, Eq. (1) was also used in the case of network of SNWs [21][22][23] where L assumes an arbitrary meaning as the length of a single unit of the network or the distance between the electric contacts. In our case, we obtain L = 56-62 nm, values which are roughly of the same order of the length of a single CNT inside the template film as shown in Fig.…”