Phase stability, bonding and electrical conduction of amorphous carbon-added Sb films

Chang, Chih Chung; Lin, C. T.; Chang, Po Chin; Chao, C. T.; Wu, Jheng-Yu; Yew, Tri‐Rung; Chin, T. S.

doi:10.1016/j.scriptamat.2011.08.017

Cited by 14 publications

(3 citation statements)

References 18 publications

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“…Recently, Te-free compounds, including CSb 8 , GaSb 9 , GeSb 10 , ZnSb 11 , NSb 12 and OSb 13 , have been widely used as phase-change materials because of their growth-dominated crystallization mechanism and rapid amorphous-to-crystalline transitions. Binary Zn-Sb systems, such as ZnSb and β-Zn 4 Sb 3 , are promising p-type materials 14 .…”

Section: Introductionmentioning

confidence: 99%

Suppression for an intermediate phase in ZnSb films by NiO-doping

Wang

et al. 2017

Sci Rep

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The structural evolution and phase-change kinetics of NiO-doped ZnSb films are investigated. NiO-doped ZnSb films exhibit a single-step crystallization process, which is different from that of undoped ZnSb. NiO-doped ZnSb can directly crystallize into a stable ZnSb phase at temperatures greater than 320 °C with suppression of a metastable ZnSb phase. These characteristics enlarge the amorphous/crystalline resistance ratio by approximately five orders of magnitude. Moreover, NiO doping of ZnSb films increases crystallization temperature from 260 to 275 °C, improves data retention temperature from 201.7 to 217.3 °C and increases crystalline activation energy from 5.64 to 6.34 eV. The improvement of the thermal parameters in the nanocomposite can be attributed to stable ZnSb grain growth refinement owing to the dispersion of NiO particles in the sample matrix. This provides additional nucleation sites and produces more ZnSb/NiO interfaces, which can initiate the nucleation and accelerate crystallization. The kinetic exponent n decreases from 1.12 to 0.44, which confirms the ultrafast one-dimensional growth and heterogeneous phase transition of the NiO-doped ZnSb films. The improved thermal stability, larger resistance ratio and direct transition to a stable phase with ultrafast one-dimensional crystal growth indicate the good potential of these materials in phase-change memory applications.

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Section: Introductionmentioning

confidence: 99%

Suppression for an intermediate phase in ZnSb films by NiO-doping

Wang

et al. 2017

Sci Rep

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“…In recent years, antimony (Sb)rich materials are also emerging as the primary PCMs for universal memory devices since their crystallization speed is significantly high and fulfills the requirement of lower reamorphization energy than Te-based PCMs. 10,11 In that particular subset of alloys, GaSb alloys are getting special attention due to the fact that they possess high transition temperature and the phase segregation can be stopped by having novel device architectures. 12,13 One of the simple, repeatable, and robust ways to reduce the crystallization time is to exploit the loopholes in the incubation time.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Up to now, there has been a great deal of research that is mainly focused on finding novel PCM alloys , and modifying the prototype material like Ge 2 Sb 2 Te 5 (GST) by doping − to reduce the programming time. In recent years, antimony (Sb)-rich materials are also emerging as the primary PCMs for universal memory devices since their crystallization speed is significantly high and fulfills the requirement of lower reamorphization energy than Te-based PCMs. , In that particular subset of alloys, GaSb alloys are getting special attention due to the fact that they possess high transition temperature and the phase segregation can be stopped by having novel device architectures. , …”

Section: Introductionmentioning

confidence: 99%

Revealing the Impact of Prestructural Ordering in GaSb Thin Films

et al. 2022

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For phase change materials (PCMs) to become a viable universal memory candidate and obsolete von-Neumann architecture, materials with very high crystallization speed are needed. Moreover, introducing prestructural ordering inside the material is also being touted as one of the promising techniques to reach the speed of SRAM or further down. In this aspect, GaSb alloys are showing much promise for not only having very low crystallization times by themselves, but also showing an enormous drop in the programming time while crystallizing the reamorphized material. Here, we demonstrate how the threshold switching behavior changes for the fully amorphous film in contrast with the disordered film with nucleation sites using conductive-atomic force microscopy. It is found that the required power and programming current for memory switching with nominally stoichiometric GaSb (44:56) are 23 nW and 6.2 nA, respectively. As expected for a nucleation-oriented PCM, the deposited thin film has two voltage thresholds during the local programming process, one for conduction and another for memory switching. However, when the nucleation sites are introduced inside the disordered film, the conduction and memory switching become simultaneous. This is also found to reduce the threshold power and SET current by 93% (1.5 nW) and 91% (550 pA), respectively. Furthermore, we also reveal the origin behind this behavioral change observed between these two thin films by using high-resolution transmission electron microscopy and synchrotron radiation photoelectron spectroscopy.

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Preparation and modification of ZnSb-based phase change storage films

Xiao

Zhou

et al. 2021

J Mater Sci: Mater Electron

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Phase stability, bonding and electrical conduction of amorphous carbon-added Sb films

Cited by 14 publications

References 18 publications

Suppression for an intermediate phase in ZnSb films by NiO-doping

Suppression for an intermediate phase in ZnSb films by NiO-doping

Revealing the Impact of Prestructural Ordering in GaSb Thin Films

Preparation and modification of ZnSb-based phase change storage films

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