Phase transformation during simultaneous chalcogenization of CuIn(S,Se)₂ thin films using metalorganic sources

Abstract

Simultaneous chalcogenization of CuIn(Sy,Se1‐y)2 (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C2H5)2Se] and ditertiarybutylsulfide [(t‐C4H9)2S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low‐temperature chalcogenization at 300 °C resulted in the formation of Cu‐SSe and In‐SSe alloys diffused into the Cu11In9 metallic precursor. On the other hand, high‐temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high‐performance and cost‐effective commercial applications.