Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the ptype nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10 5 , 2.1 V, 0.82 cm 2 ·V −1 ·s −1 , and 2.6 × 10 17 cm −3 , respectively, and the corresponding values for 1% Sb doped samples are 10 4 , 2.0 V, 1.24 cm 2 ·V −1 ·s −1 , and 3.8 × 10 17 cm −3 . We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing. KEYWORDS: p-type ZnO nanowire, piezotronic effect, piezotronics, piezo-phototronics, energy harvesting P iezoelectric semiconductors with wurtzite or zinc blend structures such as ZnO, GaN, InN, and ZnS have attracted increased attention in the burgeoning field of piezotronics and piezo-phototronics, which can be attributed to their numerous robust synthesis methods and potential for realizing novel applications by coupling their piezoelectric and semiconductor properties. 1−5 The working principle of piezotronics lies in the modulation/gating of carrier transport across the barriers/ junctions through piezoelectric-polarization-induced electric field (piezopotential) under strain, which is known as the piezotronic effect. 4,5 This provides a new mechanism for controlling charge carrier transport by mechanical strain in addition to the well-known electrically induced "field-effect". 6 A wide variety of novel applications based on the piezotronic effect have been demonstrated including strain sensors, 7 logic units, 8 memory cells, 9 electrochemical devices, 10 and tactile imaging arrays. 11 However, the aforementioned piezotronic devices were all fabricated using intrinsically n-type ZnO and few studies of piezotronics based on p-type materials, especially p-type ZnO, have been done. In order to develop a full understanding of the theory of piezotronics and enable novel applications in electronics, optoelectronics, smart MEMS/ NEMS, and human-machine interfacing, 4,11−14 it is essential to investigate the feasibility of p-type piezoelectric semiconductors for piezotronic applications.The p-type doping in ZnO nanowires (NWs) has been previously achieved through a variety of methods including chemical vapor deposition 15−17 and pulsed laser deposition. 18,19 However, the doping often suffers from poor st...