Phase transition and bandgap engineering in B1-Al N alloys: DFT calculations and experiments

Electronic Properties of Vertically Stacked h-BN/B1–xAlxN Heterojunction on Si(100)

“…The I – V property differences of h-BN/B 1– x Al x N heterojunction can be explained by the crystal structure phase transition of B 1– x Al x N film. In our previous study, the B 1– x Al x N film phase transition can occur from hexagonal BAlN (h-BAlN) to wurtzite BAlN (ω-BAlN) with the increase of Al content . The B 0.89 Al 0.11 N film is still in a hexagonal crystal structure, where the Al atom locally displaces boron (B) atom as a substitutional atom.…”

“…In our previous study, the B 1−x Al x N film phase transition can occur from hexagonal BAlN (h-BAlN) to wurtzite BAlN (ω-BAlN) with the increase of Al content. 23 The B 0.89 Al 0.11 N film is still in a hexagonal crystal structure, where the Al atom locally displaces boron (B) atom as a substitutional atom. The matched lattice in the h-BN/B 0.89 Al 0.11 N sample promoted the formation of highquality heterojunction.…”

“…In our previous study, the continuous-thick h-BN with good smoothness in a large area was achieved by radio frequency (RF) sputtering . The BAlN material is a promising ultrawide band semiconductor, which was successfully synthesized by double-power RF magnetron sputtering, and it was proved that the crystal structure phase transition could occur from hexagonal (h-BAlN) to wurtzite (ω-BAlN) with the increase of aluminum (Al) content. , The construction of h-BN/B 1– x Al x N heterojunction has some technical advantages. First, the h-BN/B 1– x Al x N heterojunction could be grown in one equipment, which largely reduced the complexity and cost of fabrication.…”

Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires

“…The lattice constants of GaAsSb in the samples were calculated to be B5.764 Å (Sample A), B5.754 Å (Sample B), B5.746 Å (Sample C), B5.696 Å (Sample D), B5.703 Å (Sample E) and B5.655 Å (GaAs NWs), respectively. The lattice constants of GaAs 1Àx Sb x as a function of x follows the linear relationship, as described by Vegard's law: 42,43 a GaAs 1Àx Sb x = (1 À x)a GaAs + xa GaSb (3) where the lattice constant of GaSb is B6.096 Å. Therefore, the Sb contents of the GaAsSb well layer are B0.247, B0.224, B0.206, B0.086, and B0.108, respectively.…”

Application development method of sci-tech journals based on cloud platforms: Taking Changbai Mountain Academic Exchange as an example

“…The "Internet +" environment and media convergence are forcing sci-tech journals to innovate on their knowledge service methods [2,3] and explore development paths that conform to the era of media "integration". Although the media integration of sci-tech journals has been discussed in the literature, [4][5][6] few studies have been conducted on the development of sci-tech journal Apps. [7][8][9] Such studies have mainly presented theoretical research about different types of Apps (platform, integrated, and single type) [10,11] in different fields, [12][13][14] as well as technical reports on the development of technology journal Apps, using cloud platforms for the production and publication of mobile reading works [15] like Application Star [16] and AppBook.…”