2013
DOI: 10.1016/j.jallcom.2013.06.050
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Phase transition and electrical properties of strontium orthovanadate

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Cited by 48 publications
(13 citation statements)
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“…To further study the bulk, grain boundary, electrode polarization, electrical conductivity and relaxation process in the material electric modulus has been analysed. This technique yields a vision into the electrical mechanism appearing in the material as a function of temperature and frequency and also helps us to understand the transport mechanism and the relaxation process in the material [44,45]. The other benefit of such technique is to overcome the electrode effect.…”
Section: Complex Electric Modulus Studiesmentioning
confidence: 99%
“…To further study the bulk, grain boundary, electrode polarization, electrical conductivity and relaxation process in the material electric modulus has been analysed. This technique yields a vision into the electrical mechanism appearing in the material as a function of temperature and frequency and also helps us to understand the transport mechanism and the relaxation process in the material [44,45]. The other benefit of such technique is to overcome the electrode effect.…”
Section: Complex Electric Modulus Studiesmentioning
confidence: 99%
“…Moreover, a previous work shows that SVO thin‐films giving the best electrical properties presented a surface covered with strongly oriented and well‐crystallized Sr 3 V 2 O 8 nanorods on top . These nanostructures are sooner found to be insulating, regarding from other works on the dielectric properties on ceramic pellets of Sr 3 V 2 O 8 ,. Indeed, they lead to SVO thin‐films with an excessively high roughness which is not desirable since a smooth and stable thin‐film onto a single phase of SVO is required for future device integration.…”
Section: Introductionmentioning
confidence: 99%
“…[10] These nanostructures are sooner found to be insulating, [33] regarding from other works on the dielectric properties on ceramic pellets of Sr 3 V 2 O 8 . [34,35] Indeed, they lead to SVO thin-films with an excessively high roughness which is not desirable since a smooth and stable thin-film onto a single phase of SVO is required for future device integration. One first solution to prevent SVO thin-films from nanostructures growth was to shut [ down the oxygen partial pressure when the substrate is cooling down inside the PLD chamber.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, various structural and impedance studies on this compound have been reported. 22,23 Recently, we reported the structural and electrical properties of Ba 3 V 2 O 8 and Ba 3 Nb 2 O 8 24,25 from this family. Some of the interesting findings from previous experimental analysis of this compound reveal the necessity for further study on this material for possible device applications.…”
Section: Introductionmentioning
confidence: 99%