Phase transition and stability of Si(1 1 1)–8 × `2'-In surface phase at low temperatures

Ryjkov, Serguei V.; Nagao, Tadaaki; Lifshits, V.G.; Hasegawa, Shuji

doi:10.1016/s0039-6028(01)01145-1

Cited by 50 publications

(42 citation statements)

References 10 publications

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“…1(d)) structure transformed to a 4×1 structure immediately at the beginning of Ag deposition (with less than 0.1 ML coverage), as reported in Ref. [25]. With further Ag deposition, the RHEED patterns looked slightly different from those at RT.…”

Section: A Rheed Observationssupporting

confidence: 63%

Epitaxial Growth of Ag on Si(111)-4×1-In Surface Studied by RHEED, STM, and Electrical Resistance Measurements

Ryjkov

Lifshits

Hasegawa

2003

e-J. Surf. Sci. Nanotechnol.

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We investigated the initial stages of Ag growth on a Si(111)-4×1-In surface at room temperature (RT) and low temperatures (LT, 70∼120K) in situ by reflection-high-energy electron diffraction (RHEED), scanning tunnelling microscopy (STM) and electrical resistance measurements in ultrahigh vacuum, together with on a Si(111)-7 × 7 clean surface for comparison. It has been revealed that the 4×1-In surface actually acts as a highly anisotropic template for Ag growth at RT, but not at LT. The Ag islands grown on the wetting layers were elongated along the 4×1-stripe at RT, while they were isotropic and round in shape at LT. This is due to a difference in migration ability of the arriving Ag adatoms. The anisotropic growth has been found to affect the formation of percolation paths for electrical conduction among the Ag islands; the growth conditions (deposition rate and temperature) do not affect the critical coverage for percolation so much on the 4×1-In surface, compared with in the case of isotropic growth on the 7×7 surface. The initial deposition of submonolayer-thick wetting layers has been found to induce some structural changes of the substrate surface; at RT, the 4×1-In structure changes into a 4×'2' structure, while the 8×'2'-In structure at LT changes into a 4×1 structure. The former change induces a resistance increase, while the latter induces a resistance drop. These changes may be caused by the induced changes in surface states and band bending beneath the surface.

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Section: A Rheed Observationssupporting

confidence: 63%

Epitaxial Growth of Ag on Si(111)-4×1-In Surface Studied by RHEED, STM, and Electrical Resistance Measurements

Ryjkov

Lifshits

Hasegawa

2003

e-J. Surf. Sci. Nanotechnol.

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“…Supporting the second idea, a recent STM study showed that a very low density of defects can drive the surface metallic locally or globally. 15 The extrinsic CDW fluctuation due to defects was also shown for a 2D system of Sn/Ge͑111͒. 19 A recent photoemission study on 4 ϫ1-In also reported the formation of gaps for m 2 and m 3 .…”

Section: Rapid Communicationsmentioning

confidence: 88%

“…21 As presented above, most of the photoemission data are consistent to an 1D CDW phase transition with intrinsic or extrinsic fluctuations at LT along with the results of STM, 2,15 electron-energy loss spectroscopy, 11 and the surface conductivity measurement. 15 However, there still remain important questions to be studied. At first, it is not clear why both of the two metallic states show the gap opening although the exact nesting occurs only for m 3 .…”

Section: Rapid Communicationsmentioning

confidence: 99%

“…20,22 Note that the Fermi-level crossings of m 2 and m 3 are very close. 2 The other issue is the nature and the role of the interchain interaction ͑as evident by the 8ϫorder͒ in forming the LT ground state, which does not condense even at 20 K. 9 The interchain interaction is suggested to be quite weak and to occur in various forms by the recent theory 8 and indeed a recent STM study showed a variety of interchain couplings at 70 K. 15 The third issue is why the present system does not show the LL behavior irrespective of its ideal 1D electronic bands and Fermi surface as recently debated for bulk 1D system of Li 0.9 Mo 6 O 17 . 23 Further study is highly requested for the above questions, which would definitely broaden our understanding of the lowdimensional electronic properties.…”

Section: Rapid Communicationsmentioning

confidence: 99%

“…Such wellconfined PLD/CDW might be related to the LT scanning tunneling microscope ͑STM͒ image showing a rather sharp charge-density maximum on the central part of a chain. 2,15 The recent x-ray diffraction study reported that the PLD is comparable for both In ͑both inner and outer rows͒ and Si surface atoms within an order of ϳ0.5 Å. 9 This LT structure was not energetically favorable in a subsequent calculation, which instead suggested that the PLD of Si atoms is negligible while that of In rows amount to ϳ0.5 Å.…”

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confidence: 99%

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Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface

et al. 2002

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The phase transition of a metallic In chain structure on Si(111) was investigated by high-resolution photoemission. Core-level spectra clearly elucidate that the symmetry breaking at low temperature occurs only within the inner parts of the In chains. In the valence bands, the transition is accompanied by the formation of pseudogaps of 80–150 meV and the band backfolding with only marginal changes of the band dispersion. No sign of Luttinger liquid behavior is observed in the spectral function near the Fermi level. This result is generally consistent with the idea of a fluctuating one-dimensional charge-density wave state but conflicting with the present structure model for the low-temperature phase

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Optical properties of indium nanowires – an adsorption study

Fleischer

Chandola

Esser³

et al. 2005

Physica Status Solidi (b)

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Changes in the optical anisotropy of the Si(111)-In : (4 × 1) surface and its low temperature (8 × 2) phase upon adsorption of additional indium and caesium were monitored by reflectance anisotropy spectroscopy. It is shown that, at submonolayer coverages, characteristic changes in the optical anisotropy occur, which are independent of the type of adsorbate and are correlated with the disappearance of the phase transition. The behaviour is shown to be consistent with the model that charge density wave formation occurs at the transition temperature. The optical anisotropy of the chains is measured in the near infrared regime and discussed in terms of interband transitions and anisotropic conductance.

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Phase transition and stability of Si(1 1 1)–8 × `2'-In surface phase at low temperatures

Cited by 50 publications

References 10 publications

Epitaxial Growth of Ag on Si(111)-4×1-In Surface Studied by RHEED, STM, and Electrical Resistance Measurements

Epitaxial Growth of Ag on Si(111)-4×1-In Surface Studied by RHEED, STM, and Electrical Resistance Measurements

Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface

Optical properties of indium nanowires – an adsorption study

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