Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

Arapkina, Larisa V.; Yuryev, Vladimir A.; Чиж, К. В.; Shevlyuga, V. M.; Storojevyh, Mikhail S; Krylova, L. A.

doi:10.1186/1556-276x-6-218

Cited by 19 publications

(39 citation statements)

References 48 publications

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“…At first, they were washed in the ammonia-peroxide solution and dried in the isopropyl alcohol vapor (for 10 min) and the clean air. Additionally, before moving into the MBE chamber, the substrates were annealed at 600°C at the residual gas pressure of less than 5 × 10 −9 Torr in the preliminary annealing chamber for 6 hours [1,2,23,27].…”

Section: Samplesmentioning

confidence: 99%

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Чиж

Arapkina

Stavrovsky

et al. 2019

Materials Science in Semiconductor Processing

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In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si 3 N 4 /SiO 2 /c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied in detail. Diffusion of hydrogen atoms from a dielectric layer into the growing film is shown to accompany the growth of a silicon film on a Si 3 N 4 layer deposited by CVD or on a SiO 2 layer obtained by thermal oxidation of a silicon wafer. The process of hydrogen migration from the dielectric substrates into the silicon film is studied using FTIR spectroscopy. The reduction of IR absorption at the bands related to the N-H bonds vibrations and the increase of IR absorption at the bands relating to the Si-N bonds vibrations in IR spectra demonstrate that hydrogen atoms leave Si 3 N 4 layer during Si deposition from a molecular beam. The absorption band assigned to the valence vibrations of the Si-H bond at ∼ 2100 cm −1 emerging in IR spectra obtained at samples deposited both on Si 3 N 4 and SiO 2 layers indicates the accumulation of hydrogen atoms in silicon films. The difference in chemical potentials of hydrogen atoms in the dielectric layer and the silicon film explains the transfer of hydrogen atoms from the Si 3 N 4 or SiO 2 layer into the growing silicon film.

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Section: Samplesmentioning

confidence: 99%

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Чиж

Arapkina

Stavrovsky

et al. 2019

Materials Science in Semiconductor Processing

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“…The Ge/Si samples were grown and characterized using an integrated ultrahigh vacuum instrument [9][10][11][12] built on the basis of the Riber SSC 2 surface science center with the EVA 32 molecular-beam epitaxy (MBE) chamber equipped with the RH20 reflection high-energy electron diffraction (RHEED) tool (Staib Instruments) and connected through a transfer line to the GPI-300 ultrahigh vacuum scanning tunnelling microscope (STM) [13][14][15]. Sources with the electron beam evaporation were used for Ge or Si deposition.…”

Section: Equipment and Techniquesmentioning

confidence: 99%

“…Then, the temperature was rapidly lowered to about 750℃. The rate of the further cooling was around 0.4℃/s that corresponded to the 'quenching' mode applied in [10].…”

Section: Sample Preparation Procedures Preparation Of Samples For Stmmentioning

confidence: 99%

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

et al. 2012

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Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their ‘condensation’ fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p–i–n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity of the heterostructure decreases.

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“…The experiments were carried out using an ultrahigh-vacuum (UHV) MBE chamber (Riber EVA 32) connected with a UHV scanning tunnelling microscope (STM) chamber (GPI 300) [7,13,14]. The rates of Ge and Si deposition and the coverages of Ge and Si (h Ge , h Si ) were measured by a graduated in advance film thickness monitors (Inficon Leybold-Heraeus XTC 751-001-G1) with quartz sensors installed in the MBE chamber.…”

Section: Techniques and Equipmentmentioning

confidence: 99%

“…Ge oval drops with the lateral dimensions of about a hundred nanometers have the highest number density among the detected clusters. Then, we detected a mixture of c(4×2) and p(2×2) reconstructions on the surface of the formed wetting layer whereas the simultaneous presence of both these structures in comparable proportions on wetting layer patches is a distinctive feature of the low-temperature mode of the wetting layer growth (at T gr < 600 ℃) in the MBE process [6,7]. And finally, we have shown that the Ge drops disappear from the surface as a result of long-term isothermal annealing of the original Ge film under the conditions of an isolated system; the sizes of the large clusters increase at the expense of the smaller ones and the total density of Ge clusters on the surface decreases by several orders of magnitude.…”

Section: Introductionmentioning

confidence: 96%

Ge clusters and wetting layers forming from granular films on the Si(001) surface

Storozhevykh¹,

Arapkina²,

Yuryev³

2016

J. Phys.: Conf. Ser.

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The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600 ℃. As a result of the short-term annealing at 600 ℃ in conditions of a closed system, the Ge granular film transforms to the usual wetting layer and Ge clusters with multimodal size distribution and the Ge oval drops having the highest number density. After the long-term thermal treatment of the Ge film at the same temperature, Ge drops disappear; the large clusters increase their sizes at the expense of the smaller ones. The total density of Ge clusters on the surface drastically decreases. The wetting layer mixed c(4 × 2) + p(2 × 2) reconstruction transforms to the single c(4 × 2) one which is likely thermodynamically favoured. Pyramids or domes are not observed on the surface after any annealing.

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Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

Cited by 19 publications

References 48 publications

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Ge clusters and wetting layers forming from granular films on the Si(001) surface

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