Antiferroelectric materials exhibit electric-field-induced phase transitions between antiferroelectric and ferroelectric states, which enable their use in energy storage and other applications. However, the mechanisms of these transitions are insufficiently understood. Here, we considered the electric-field-induced phase transition in the lead-free antiferroelectric NaNbO3. Macroscopic measurements of polarization and longitudinal, transverse and volumetric strain were complemented with simultaneous structural investigations using highenergy X-ray radiation yielding crystallographic strain and unit cell volume change. The fieldinduced behaviour can be divided into the structural antiferroelectric-ferroelectric phase transition at about 8 kV/mm and the clearly decoupled polarization switching process at about 12 kV/mm, which is associated with a large increase in polarization and strain. Decoupling of the field induced phase transition and polarization switching is related to the randomly-oriented grains and mechanical stress present at the phase boundary.Antiferroelectric materials are characterized by a phase transition from an antiferroelectric (AFE) to a ferroelectric (FE) state induced by the application of an external electric field. This transition is often accompanied by the appearance of double polarization hysteresis loops, depending on whether the transition is reversible 1-4 or irreversible 5,6 . Reversible AFE-FE transitions enable potential application of AFE materials in a wide range of devices, including high energy density capacitors 7-10 , non-volatile random access memory 11 , and electrocaloric refrigerators 12,13 . Double polarization hysteresis loops were observed in PbZrO3-based 1,14 , PbHfO3-based 15,16 , and