Doping
with extrinsic elements in bismuth vanadate (BiVO4, BVO)
has been widely exploited for boosting photoelectrochemical
(PEC) water splitting. However, changes in the carrier transport behavior
of doping, in particular for the Bi-site doping in BVO, are still
not well understood. Here, we explore the im pact of site-selective
doping on structural variation and electron transport in BVO as well
as its implication for designing photoanodes with improved photoelectrochemical
(PEC) performance. Two types of single-crystalline doped BVO films,
with the V site substituted with Mo (MoV) ions or the Bi
site substituted with Gd ions (GdBi), are prepared by pulsed-laser
deposition. Compared to pristine BVO, both types of doped photoanodes
are found to require thinner films for delivering larger photocurrents,
but the underlying doping mechanism appears to be different. Combined
with temperature-dependent Raman characterization, X-ray photoelectron
microscopy, and solid-state electron transport measurements, it is
suggested that GdBi doping facilitates carrier transport
by introducing structural distortion and a gentle increase in the
oxygen vacancy concentration. This is in contrast to MoV doping, which substantially enhances the donor density and facilitates
carrier hopping. This work provides a perspective on understanding
the impact of site-selective doping on BVO photoanodes for efficient
PEC water splitting.