2009
DOI: 10.1016/j.jcrysgro.2009.07.018
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Phase transitions of p-type (Pb,Sn,Ge)Te-based alloys for thermoelectric applications

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Cited by 14 publications
(6 citation statements)
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“…Following the 450 ∘ C hot pressing conditions, a thermal hysteresis was observed between the heating and cooling cycles while measuring both and values, with the most pronounced differences in the 100-400 ∘ C temperature range. This abnormal and temperature dependent trend can result from the second order phase transition, associated with GeTe based compounds, as was previously reported for single crystal grown Ge Pb 1− Te and Ge Sn 1− Te alloys [12]. In case that as was explained referring to the higher low temperature electrical resistivity values, associated with lower carrier mobility values, compositional inhomogeneity is apparent for this low temperature hot pressing process, compositional variations in the investigated (GeTe) (Bi 2 Te 3 ) 1− quasi-binary system, are expected to result is a decreased phase transition temperature from the low temperature rhombohedral to the high temperature cubic phases, with decreasing of the values.…”
Section: Transport Properties Following Hot Pressing Consolidationsupporting
confidence: 76%
“…Following the 450 ∘ C hot pressing conditions, a thermal hysteresis was observed between the heating and cooling cycles while measuring both and values, with the most pronounced differences in the 100-400 ∘ C temperature range. This abnormal and temperature dependent trend can result from the second order phase transition, associated with GeTe based compounds, as was previously reported for single crystal grown Ge Pb 1− Te and Ge Sn 1− Te alloys [12]. In case that as was explained referring to the higher low temperature electrical resistivity values, associated with lower carrier mobility values, compositional inhomogeneity is apparent for this low temperature hot pressing process, compositional variations in the investigated (GeTe) (Bi 2 Te 3 ) 1− quasi-binary system, are expected to result is a decreased phase transition temperature from the low temperature rhombohedral to the high temperature cubic phases, with decreasing of the values.…”
Section: Transport Properties Following Hot Pressing Consolidationsupporting
confidence: 76%
“…In addition to the reported high TE performance of GeTe-based materials, its phase transition deforms the lattice of GeTe from a NaCl-type face-centered cubic (β-GeTe) structure to a rhombohedral (α-GeTe) structure 59,60 at ∼ 700 K or below. 61 The subtle changes of the Seebeck coefficient and resistivity in the vicinity of the phase transition temperature have been barely discussed.…”
Section: Introductionmentioning
confidence: 99%
“…10,11 Pseudoternary compounds Sn 1Àx Ge x Te and Pb 1Àx Ge x Te were also designed to ensure high electrical conductivities and low thermal conductivities simultaneously, to improve TE performance. [12][13][14] Historically, pressure-induced phase transitions and TE enhancement have been reported in semiconductors. HgTe undergoes a phase transition which is accompanied by changes in thermopower when pressure is applied.…”
Section: Introductionmentioning
confidence: 99%