2019
DOI: 10.1002/adma.201901263
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Phonon‐Assisted Electro‐Optical Switches and Logic Gates Based on Semiconductor Nanostructures

Abstract: High‐performance nanostructured electro‐optical switches and logic gates are highly desirable as essential building blocks in integrated photonics. In contrast to silicon‐based optoelectronic devices, with their inherent indirect optical bandgap, weak light‐modulation mechanism, and sophisticated device configuration, direct‐bandgap‐semiconductor nanostructures with attractive electro‐optical properties are promising candidates for the construction of nanoscale optical switches for on‐chip photonic integration… Show more

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Cited by 23 publications
(16 citation statements)
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“…Next, by applying an increased bias voltage, the NR spectral profile undergoes several noticeable evolutions; that is, the PL shows a progressive shift toward longer wavelength, accompanied by a gradually reduced emission intensity and broadened line width, as shown in Figure d. Furthermore, periodic undulation with energy spacing about 37 meV becomes apparent at high E , implying a field-boosted LO phonon scattering process . The corresponding normalized PL intensity mapping is presented in Figure e, showing a maximal wavelength shift about 20 nm, i .…”
Section: Resultsmentioning
confidence: 87%
See 1 more Smart Citation
“…Next, by applying an increased bias voltage, the NR spectral profile undergoes several noticeable evolutions; that is, the PL shows a progressive shift toward longer wavelength, accompanied by a gradually reduced emission intensity and broadened line width, as shown in Figure d. Furthermore, periodic undulation with energy spacing about 37 meV becomes apparent at high E , implying a field-boosted LO phonon scattering process . The corresponding normalized PL intensity mapping is presented in Figure e, showing a maximal wavelength shift about 20 nm, i .…”
Section: Resultsmentioning
confidence: 87%
“…Furthermore, periodic undulation with energy spacing about 37 meV becomes apparent at high E, implying a field-boosted LO phonon scattering process. 46 The corresponding normalized PL intensity mapping is presented in Figure 1e, showing a maximal wavelength shift about 20 nm, i.e., from 505 at E = 0 kV/cm (0 V) to 525 nm at E = 13.5 kV/cm (8.5 V). The marked spectral change manifests the biasing scheme as an efficient way to tune the gamut and strength of PL emission.…”
Section: Resultsmentioning
confidence: 99%
“…Figure a shows a scanning electron microscopy (SEM) image of a CdS nanowire with a diameter of 170 nm and a length of 13.5 μm. The excellent surface smoothness and diameter uniformity of as-synthesized nanowires can be clearly seen, which are important for low-loss optical waveguiding and construction of nanophotonic devices. Figure b shows a sketch of the experimental arrangement for the characterization of single CdS nanowire-based TO modulators. The signal light used was a 515 nm wavelength continuous wavelength (CW) laser, while the switch light used was a 405 nm-wavelength CW laser with its intensity modulated by an optical chopper.…”
Section: Resultsmentioning
confidence: 99%
“…With the increase of the input laser intensity, these Por-COFs exhibit the NLO conversion from saturated SA to RSA, which may enable the application of optical switches. [181] Additionally, the metallized Por-COFs have a larger nonlinear absorption coefficient (4500 cm GW −1 ), owing to the increase of the rigidity of the system caused by the introduction of metal ions and the effective charge transfer transition between the d-orbit of metal ions and the π-orbit of porphyrin. Moreover, for crystalline porous materials with a π-conjugated system, the NLO properties of the material can be significantly enhanced by the introduction of substituents to form an asymmetrically substituted pushpull system.…”
Section: Organic/inorganic Hybrid Porous Materials For Third-order Nlomentioning
confidence: 99%