Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1−xN quantum wells

Zhu, Jun; S, Ban; Sihua, Ha

doi:10.1088/1674-1056/21/9/097301

Cited by 8 publications

(2 citation statements)

References 35 publications

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“…Figure 1 The Dielectric Continuum model 25 describes polar optical phonons (POPs) in arbitrary heterostructures. As POP scattering is the main limitation on electron mobility in quality GaN, numerous authors have invested significant theoretical effort into the elaboration of POP spectra in various wurtzite heterostructures [26][27][28][29][30] . A structure as simple as this, in fact, can be solved analytically.…”

mentioning

confidence: 99%

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Bader

Chaudhuri

Schubert

et al. 2019

Applied Physics Letters

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To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the temperature dependence of its intrinsic mobility. Finally, the effects of strain on the electronic structure of the confined 2D hole gas are examined and a means is proposed to engineer the strain to improve the 2D hole mobility for enhanced p-channel device performance, with the goal of enabling wide-bandgap CMOS.Decades after the celebrated invention of Mg p-doping 1 in Gallium Nitride (GaN) and the subsequent development of GaN-based LEDs, the manipulation of holes in GaN remains a fundamental challenge. Consequently, despite the expected dominance of GaN High Electron Mobility Transistors (HEMTs) in the coming generation of power electronics 2 and communications systems 3 , there is no complementary p-channel device which can be readily integrated. This incompleteness restricts the possible circuit topologies and system designs acheivable in GaN electronics, but arises quite straightforwardly from the physics of the GaN valence band. These bands, both heavy and deep in energy, have proven difficult to contact with typical metal workfunctions 4 , difficult to dope with high efficiency 5 , and difficult to flow current through with high conductivity. Nonetheless, the commercial interest in generating complementary GaNbased circuits 6 and scientific interest in studying highlydegenerate hole physics 7 have prompted great recent progress in p-channel devices 8 .Of the varied structures 6,9-16 which have been proposed as a platform for p-channel III-Nitride electronics, the single GaN/AlN heterojunction field-effect transistor has received recent attention for its high sheet conductance 7 and excellent device performance 8 . In this structure, depicted in Fig 1(a), the all-binary materials provide a straightforwardly repeatable growth with no possible parasitic electron channels, a tremendous holeinducing polarization-charge for low sheet-resistance, and maximal bandgaps for extreme voltage-handling capability. Given the recent reports of temperature-dependent transport studies in this heterostructure 7 , and recent first-principles suggestions of possible enhancements to hole mobility in bulk p-GaN 17 , this work presents a model to explain the measured mobility of the 2D hole a) sjb353@cornell.edu; http://sambader.net 2.5 0.0 2.5 ← k y [1/nm] k x → (b) HH LH 0 2 4 DOS [eV −1 nm −2 ] 150 100 50 0 50 Energy [meV] HH LH (c) 0 5 10 15 20 Depth [nm] E C E V E F p GaN 13nm AlN ↓ 2DHG 0.5 1.0 1.5 2.0 2.5 Effective mass [m e ] HH LH (d) (a) 0 1 f(k x ) f(k y ) FIG. 1. (a) A 13nm GaN layer on top of a thick AlN buffer induces a two-dimensional hole gas of density ∼ 4.4×10 13 /cm 2 , which is confined at the interface by strong p...

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confidence: 99%

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Bader

Chaudhuri

Schubert

et al. 2019

Applied Physics Letters

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“…Regarding the GaN/GaInN system, only theoretical calculations of the ISB transition energy have been published so far [106].…”

Section: In Containing Superlattices: Alinn/gan Alinn/gainn and Gan/g...mentioning

confidence: 99%

III-nitride semiconductors for intersubband optoelectronics: a review

Beeler¹,

Trichas²,

Monroy³

2013

Semicond. Sci. Technol.

178

106

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III-nitride nanostructures have recently emerged as promising materials for new intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on infrared optical transitions between quantum-confined electronic states in the conduction band of GaN/Al(Ga)N nanostructures, namely quantum wells or quantum dots. The large conduction band offset (about 1.8 eV for GaN/AlN) and sub-picosecond ISB relaxation of III-nitrides render them appealing materials for ultrafast photonic devices in near-infrared telecommunication networks. Furthermore, the large energy of GaN longitudinal-optical phonons (92 meV) opens prospects for high-temperature THz quantum cascade lasers and ISB devices covering the 5-10 THz band, inaccessible to As-based technologies due to phonon absorption. In this paper, we describe the basic features of ISB transitions in III-nitride quantum wells and quantum dots, in terms of theoretical calculations, material growth, spectroscopy, resonant transport phenomena, and device implementation. The latest results in the fabrication of control-by-design devices such as all-optical switches, electro-optical modulators, photodetectors, and lasers are also presented.

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Built-in electric field and hydrostatic pressure effects on exciton states in a wurtzite (In,Ga)N/GaN coupled double quantum well

Wang

Duan

2023

J. Korean Phys. Soc.

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Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1−xN quantum wells

Cited by 8 publications

References 35 publications

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

III-nitride semiconductors for intersubband optoelectronics: a review

Built-in electric field and hydrostatic pressure effects on exciton states in a wurtzite (In,Ga)N/GaN coupled double quantum well

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