Phonon-assisted reduction of hot spot temperature in AlInN ternaries

Abstract

A longstanding challenge is the reduction of temperature in hot spots occurring in AlN-based ternary device structures. In this paper, we develop a uniaxial dielectric model and present theoretical analysis of the Frohlich interaction between electrons and interface and confined optical phonons, and their properties. This model is used to introduce new ways of achieving temperature reduction in hot spots in regions of elevated temperature in AlN- and InN-based electronic and optoelectronic devices.

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

“…Such properties hinder sapphire to become the most promising candidate to be used for a high-power device because an extra arrangement would be needed to manage the heat dissipation from the device. 15 − 18 Therefore, a substrate with high thermal conductivity and high electrical resistance is essential to fabricate efficient high-power devices. The materials exhibiting these two divergent properties are beryllium oxide (BeO), diamond, aluminum nitride, silicon carbide, and single-crystal boron nitride.…”

“…GaN is known to exhibit superior characteristics such as small Auger effects, high radiative recombination rate, high electron mobility, biocompatibility, and a tunable band gap from near-infrared (InN = 0.7 eV) to deep ultraviolet (AlN = 6.12 eV) by alloying it with indium and aluminum, respectively. , Such unprecedented characteristics make GaN a promising material for electrical and optical applications such as high electron mobility transistors, light-emitting diodes (LEDs), photodetectors (PDs), photoanodes, − and piezoelectric nanogenerators. , Conventionally, GaN is grown on a sapphire substrate, which is a thermal and electrical insulator. Such properties hinder sapphire to become the most promising candidate to be used for a high-power device because an extra arrangement would be needed to manage the heat dissipation from the device. − Therefore, a substrate with high thermal conductivity and high electrical resistance is essential to fabricate efficient high-power devices. The materials exhibiting these two divergent properties are beryllium oxide (BeO), diamond, aluminum nitride, silicon carbide, and single-crystal boron nitride.…”

Anharmonic decay of high-frequency LA modes in quasi-isotropic III-nitrides

“…The decay of strongly-interacting optical phonons into acoustic phonons is a phenomenon that is essential to the understanding of the electron transport properties in heterostructures. Such applications include the influence on electron mobility [3], the thermodynamic properties of the lattice and the interaction with hot electrons in high-electric field FETs, in which, the decay of LO phonons delocalizes energy from the self-heating region in the transistors [4][5][6] and, consequently, controlling the lifetimes of the hot phonons generated during this energy relaxation process. Therefore, it is of importance to investigate the intrinsic phonon decay properties and the decay channels of high-quality materials as * Author to whom any correspondence should be addressed.…”