Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mi>C</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1

Feldman, D. W.; Parker, James; Choyke, W. J.; Patrick, Lyle

doi:10.1103/physrev.173.787

Cited by 529 publications

(190 citation statements)

References 14 publications

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“…Thus, an understanding of the lattice properties that modify these phonon frequencies is necessary both to understand the Reststrahlen phenomenon and to predict what materials will be best suited for a given spectral range. In general, strong interatomic bonding and light atomic masses lead to a high phonon Wave number (cm Figure 9 Calculated phonon dispersions in the Γ→K→X high symmetry direction for Si (black curves) and 3C-SiC (red curves) with experimental data for Si (black squares) [132] and 3C-SiC (red circles) [133]. Polar 3C-SiC has a frequency gap between the acoustic and optic branches (A-O gap) and a frequency gap between the LO and TO branches (LO/TO splitting).…”

Section: Lattice Properties and Optic Phonons: Dispersion Lifetimes mentioning

confidence: 99%

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

et al. 2015

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Abstract:The excitation of surface-phonon-polariton (SPhP) modes in polar dielectric crystals and the associated new developments in the field of SPhPs are reviewed. The emphasis of this work is on providing an understanding of the general phenomenon, including the origin of the Reststrahlen band, the role that optical phonons in polar dielectric lattices play in supporting sub-diffraction-limited modes and how the relatively long optical phonon lifetimes can lead to the low optical losses observed within these materials. Based on this overview, the achievements attained to date and the potential technological advantages of these materials are discussed for localized modes in nanostructures, propagating modes on surfaces and in waveguides and novel metamaterial designs, with the goal of realizing low-loss nanophotonics and metamaterials in the mid-infrared to terahertz spectral ranges.

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Section: Lattice Properties and Optic Phonons: Dispersion Lifetimes mentioning

confidence: 99%

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

et al. 2015

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“…We note that the calculated values of C 12 as listed in Table 1 have significant difference with that from experimental values [33,42]. The above difference suggests that the proposed interatomic potetial model needs modification.…”

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confidence: 56%

“…Henceforth, mechanically stable phases for cubic crystal should satisfy the Born criterion C 12  C 44 > 0. Referring to equations for C 12 and C 44 , with emphasis on charge transfer interaction as well as covalency effect, the equilibrium condition leads to Table 1, and are also compared with available experimental [32,33,42] and theoretical [13−16,32, 39−47] studies. The stable phase of the crystal is the one in which the shear elastic constant C 44 is nonzero and which has the lowest potential energy among the mechanically stable lattices [48].…”

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confidence: 99%

Mechanically induced stiffening, thermally driven softening, and brittle nature of SiC

et al. 2016

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An effective interionic potential calculation with long range Coulomb, charge transfer interaction, covalency effect, short range overlap repulsion extended, van der Waals interaction, and zero point energy effect is implemented to investigate the pressure dependent structural phase transition (ZnS-type (B3) to NaCl-type (B1) structure), and mechanical, elastic, and thermodynamic properties of silicon carbide (SiC). Both charge transfer interaction and covalency effect are important in revealing the pressure induced structural stability, Cauchy discrepancy, anisotropy factor, melting temperature, shear modulus, Young's modulus, and Grüneisen parameter. We also present the results for the temperature dependent behaviors of normalized volume, hardness, heat capacity, and thermal expansion coefficient. SiC is mechanically stiffened and thermally softened as inferred from pressure (temperature) dependent elastic constant's behavior. The Pugh's ratio, the Poisson's ratio , and the Cauchy's pressure C 12 -C 44 for SiC ceramic confirm its brittle nature.

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“…Therefore, vibrational properties of polytypes are fairly similar, implying small magnitude of the interpolytype isotopic fractionation. The similarity of vibrational density-of-states (VDOS) of SiC polytypes is manifested in Raman and infra-red spectra [25] and in inelastic X-ray and neutron scattering [26]. Virtually identical VDOS of all studied SiC polytypes and preliminary thermodynamic calculations (Polyakov, unpublished) indicates that at the relevant temperatures equilibrium structure-dependent isotopic fractionation between them should have magnitudes significantly smaller than that observed in our experiments.…”

Section: Discussionmentioning

confidence: 80%

Isotopic heterogeneity in synthetic and natural silicon carbide

Shiryaev

Wiedenbeck

Reutsky

et al. 2008

Journal of Physics and Chemistry of Solids

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The distribution of both carbon and silicon isotopes in synthetic sublimation growth SiC wafers and in natural SiC grains was studied using secondary ion mass-spectrometry (SIMS).Significant variations in both isotopic ratios were observed which were broadly correlated with the crystalline perfection as documented by Raman microspectroscopy. Domains consisting of 15R (or with its admixture) are, on average, enriched in 12 C isotope relative to 6H domains, and they also show larger scatter in their observed silicon isotope ratios. We ascribe such heterogeneity to fluctuations of Si/C ratio in the growth medium and it is possible to model the spatial extent of such fluctuations. For the natural SiC grains the isotopic data suggest that they grew under relatively stable conditions, although some of them show significant isotopic zoning.

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Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes3C,4H,6H,1

Cited by 529 publications

References 14 publications

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

Mechanically induced stiffening, thermally driven softening, and brittle nature of SiC

Isotopic heterogeneity in synthetic and natural silicon carbide

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