1997
DOI: 10.1103/physrevlett.79.4609
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Phonon Dispersion of an Epitaxial Monolayer Film of Hexagonal Boron Nitride on Ni(111)

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Cited by 168 publications
(158 citation statements)
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“…Contrary to this, in the EELS measurements of Rokuta et al [9] on a monolayer of h-BN deposited on a Ni(111) substrate, an almost degeneracy of ZA and ZO was found at K. We investigated two reasons that might lead to this almost degeneracy: (i) charge transfer from the h-BN monolayer to or from the substrate and (ii) the influence of the interlayer interaction with the substrate. As for the effect of charge transfer, we calculated the phonons for a charged single sheet of h-BN.…”
Section: Prl 98 095503 (2007) P H Y S I C a L R E V I E W L E T T E mentioning
confidence: 69%
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“…Contrary to this, in the EELS measurements of Rokuta et al [9] on a monolayer of h-BN deposited on a Ni(111) substrate, an almost degeneracy of ZA and ZO was found at K. We investigated two reasons that might lead to this almost degeneracy: (i) charge transfer from the h-BN monolayer to or from the substrate and (ii) the influence of the interlayer interaction with the substrate. As for the effect of charge transfer, we calculated the phonons for a charged single sheet of h-BN.…”
Section: Prl 98 095503 (2007) P H Y S I C a L R E V I E W L E T T E mentioning
confidence: 69%
“…First principles calculations are generally accepted as the most accurate theoretical description of the lattice dynamics [8]. Recently, for h-BN, the validity of state of the art ab initio calculations was put in doubt by two experiments: Rokuta et al [9] reported the only experimental data available for the phonon dispersion relations by electron-energy loss spectroscopy (EELS) performed on a monolayer of h-BN deposited on a Ni(111) substrate. Among several deviations from ab initio calculations of the lattice dynamics both for a monolayer [10,11] and for bulk h-BN [12,13], the EELS data show a degeneracy at the K point between acoustic (ZA) and optical (ZO) modes polarized along the c axis.…”
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confidence: 99%
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“…In earlier experiments by angle resolved ultraviolet photoelectron spectroscopy and angle resolved secondaryelectron spectroscopy, it was found that h-BN monolayer is weakly bound to the metal surfaces and remains insulator [31]. However, in later experiments performed by the same group using the high resolution electron loss spectroscopy some mixing of the π h-BN and d metal bands has been reported [32]. On the other hand near-edge x-ray adsorption fine structure, photoemission and Auger spectroscopy demonstrate strong orbital hybridization between Ni 3d and h-BN π states, which indicates strong interaction between h-BN and Ni(111) substrate [33][34][35].…”
Section: Introductionmentioning
confidence: 93%
“…The electronic structure of both graphene and h-BN on Ni͑111͒ is perturbed in a similar manner due to the Ni 3d-MG ͑h-BN͒ orbital mixing. [15][16][17][18] In this paper we systematically treat the process of x-ray absorption in MG/Ni͑111͒ and h-BN/Ni͑111͒ at the B 1s, C 1s, and N 1s edges by initial-state, final-state, and dynamical calculations, and compare the results with the B 1s, C 1s, and N 1s NEXAFS spectra. The experimental data for h-BN/Ni͑111͒ were measured previously, 17 while for the MG/Ni͑111͒ system only the electron energy loss spectra ͑EELS͒ were reported so far.…”
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confidence: 99%