Results and Discussion Structural characterisation. The structural characterisation using atomic force microscopy (AFM) and grazing incidence X-ray diffraction (XRD) of the Sn nanostructures shown here, was presented in detail in ref. 32. The relevant results of these measurements are summarised in Table 1 and Fig. 1. Figure 1 shows AFM images of the two types of nanostructures highlighting their different morphologies: Fig. 1(a) shows a 53 nm thick, granular cluster-assembled film grown on amorphous SiO 2 while Fig. 1(b) shows Sn islands, grown on Si(111), with an average island height of 68 ± 17 nm (Fig. 1(b)). To avoid oxidation the nanostructures were capped with Si and Ge respectively. Figure 1 shows clearly that the morphology of the two types of nanostructures is very different. While the Sn islands are textured, with a preferred orientation perpendicular to the substrate, the cluster-assembled film is polycrystalline, consisting of randomly oriented grains formed by coalescence of much smaller deposited clusters. These conclusions are further supported by XRD measurements (not shown). Further details on the sample fabrication and characterisation processes can be found in 32 .