2022
DOI: 10.1088/1361-648x/ac8bc0
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Phonon localization and resonance in thermal transport of pillar-based GaAs nanowires

Abstract: Exploring the possibility of nanostructures to modulate thermal conductivity (TC) contributes to promote a deeper comprehension of phonon diffusion and transport processes with the design of thermally insulated devices with high ZT values, and the GaAs nanowires (NWs) widely used in optoelectronic and microelectronic devices exhibit nondiffusive phonon thermal transport phenomena attributed to size effects, while ignoring the wave effects of phonons. Here, we simulate the TC of pillar-based GaAs NWs using Non-… Show more

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Cited by 4 publications
(1 citation statement)
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“…The participation rate (PR) [42,43] is a valid measure of the degree of localization of phonon vibrational modes. The phonon PR is close to O(1) when all atoms are involved in the vibrations relative to the off-domain modes, while for highly localized phonon modes, the PR is of the order of O(1/N).…”
Section: Numerical Simulation Details and Calculation Methodsmentioning
confidence: 99%
“…The participation rate (PR) [42,43] is a valid measure of the degree of localization of phonon vibrational modes. The phonon PR is close to O(1) when all atoms are involved in the vibrations relative to the off-domain modes, while for highly localized phonon modes, the PR is of the order of O(1/N).…”
Section: Numerical Simulation Details and Calculation Methodsmentioning
confidence: 99%