Phonon Properties of Few-Layer Crystals of Quasi-One-Dimensional ZrS<sub>3</sub> and ZrSe<sub>3</sub>

Osada, Kazuki; Bae, Soungmin; Tanaka, Masatoshi; Raebiger, Hannes; Shudo, K.; Suzuki, Takanori

doi:10.1021/acs.jpcc.5b12441

Cited by 47 publications

(48 citation statements)

References 42 publications

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“…This is also observed in case of bulk nanobelts (Figure 2b). The enhancement in the intensity of the inplane vibrations (Eg and Eu) may be due to the extended interplanar spacing (as observed in TEM, Figure 3c) resulting in the oscillations of atoms more freely while decrease in intensity of out-of plane vibrations (A1g) can be attributed to dominating quantum confinement effects [39][40]. Further, it has been reported that the surface of HfS2 readily gets oxidized in presence of ambient oxygen increasing its thickness by 250 % due to the penetration of oxygen atoms inside the layers within a time span of 24 hours [22].…”

Section: Resultsmentioning

confidence: 93%

“…It has been reported that A1g Raman mode is highly intense where as Eg and Eu (LO) modes are weak for standard hexagonal plates of HfS2 [22,38]. However, the enhancement of the in-plane vibrations modes Eg and Eu (LO) with a suppression of the out-of-plane vibrations (A1g) in case of nanobelts suggests quantum confinement effects [39][40] or change in the interlayer spacing between the multilayers of HfS2 in 1T-phase, which is well supported by our XRD results effecting Raman intensity. High resolution transmission electron microscopy (HRTEM) is also employed to calculate the distance between the atomic planes.…”

Section: Resultsmentioning

confidence: 99%

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High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide

et al. 2017

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Material synthesis and characterizationABSTRACT Producing monolayers and few-layers in high yield with environment-stability is still a challenge in hafnium disulphide (HfS 2 ), which is a layered two-dimensional material of group-IV transition metal dichalcogenides, to reveal its unlocked electronic and optoelectronic applications. For the first time, to the best of our knowledge, we demonstrate a simple and cost-effective method to grow layered belt-like nano-crystals of HfS 2 with surprisingly large interlayer spacing followed by its chemical exfoliation. Various microscopic and spectroscopic techniques reveal these as-grown crystals exfoliate into single or few layers in some minutes using solvent assisted ultrasonification method in N-Cyclohexyl-2-pyrrolidone. The exfoliated nanosheets of HfS 2 exhibit an indirect bandgap of 1.3 eV with high stability against ambient degradation. Further, we demonstrate that these nanosheets holds potential for electronic applications by fabricating field-effect transistors based on few layered HfS 2 exhibiting field-effect mobility of 0.95 cm 2 /V-s with a high current modulation ratio (Ion/Ioff) of 10 4 in ambient. The method is scalable and has potential significance for both academy and industry. KEYWORDS Two-dimensional materials, hafnium-disulphide, nano-crystals, liquid-phase exfoliation, environment-stability, field-effect transistor ELECTRONIC SUPPLEMENTARY MATERIAL High yield synthesis and dimensional belt like hafnium disulphide Material synthesis and characterization 1 Atomic force microscopic image of micromechanically cleaved HfSThe as-prepared crystals of HfS2 were micromechanically cleaved using scotch pasted onto cleaned silicon substrate. The adhesive of the tape on substrate were then removed using ultrasonication in acetone and propanol followed by baking the substrate at 120 o C for 2 hours in vacuum (10 the sample was taken in tapping mode. The thickness of the flake was found to be 300 nm. Figure S1AFM image of HfS2 flake on silicon wafer. The graph in the inset represents the ELECTRONIC SUPPLEMENTARY MATERIAL High yield synthesis and liquid exfoliation of two dimensional belt like hafnium disulphide

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Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide

et al. 2017

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“…Mechanical exfoliation, using sticky tape or viscoelastic materials, has allowed exfoliation of individual nanoribbons down to a few layers. 53,140 The high aspect ratio of individual nanoribbons makes it challenging to isolate single layers. Recent calculations show that the interlayer potential (45 meV/atom), is less than that of MoS2 (60 meV/atom) and therefore should allow for exfoliation of the bulk down to a single layer.…”

Section: Isolation and Exfoliation Of Mx3 Crystalsmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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“…Osada et al investigated the phonon properties of few-layer quasi-1D form of ZrS 3 . 87 A considerable downshift of the frequency of the A 3 g mode with decreasing number of layers and a slight downshift of the A 5 g mode were found which were explained through intrachain, interchain, and interlayer force constants using simple 1D lattice models. Thus, it was pointed out that the large shift of the A 3 g mode reflects the quasi-1D structure of ZrS 3 .…”

Section: B Quasi-1d Behavior In Zrsmentioning

confidence: 88%

Nanoribbons: From fundamentals to state-of-the-art applications

Yagmurcukardes

Peeters

Senger

et al. 2016

Applied Physics Reviews

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Atomically thin nanoribbons (NRs) have been at the forefront of materials science and nanoelectronics in recent years. State-of-the-art research on nanoscale materials has revealed that electronic, magnetic, phononic, and optical properties may differ dramatically when their one-dimensional forms are synthesized. The present article aims to review the recent advances in synthesis techniques and theoretical studies on NRs. The structure of the review is organized as follows: After a brief introduction to low dimensional materials, we review different experimental techniques for the synthesis of graphene nanoribbons (GNRs) with their advantages and disadvantages. In addition, theoretical investigations on width and edge-shape-dependent electronic and magnetic properties, functionalization effects, and quantum transport properties of GNRs are reviewed. We then devote time to the NRs of the transition metal dichalcogenides (TMDs) family. First, various synthesis techniques, E-field-tunable electronic and magnetic properties, and edge-dependent thermoelectric performance of NRs of MoS 2 and WS 2 are discussed. Then, strongly anisotropic properties, growth-dependent morphology, and the weakly width-dependent bandgap of ReS 2 NRs are summarized. Next we discuss TMDs having a T-phase morphology such as TiSe 2 and stable single layer NRs of mono-chalcogenides. Strong edge-type dependence on characteristics of GaS NRs, width-dependent Seebeck coefficient of SnSe NRs, and experimental analysis on the stability of ZnSe NRs are reviewed. We then focus on the most recently emerging NRs belonging to the class of transition metal trichalcogenides which provide ultra-high electron mobility and highly anisotropic quasi-1D properties. In addition, width-, edge-shape-, and functionalization-dependent electronic and mechanical properties of blackphosphorus, a monoatomic anisotropic material, and studies on NRs of group IV elements (silicene, germanene, and stanene) are reviewed. Observation of substrate-independent quantum well states, edge and width dependent properties, the topological phase of silicene NRs are reviewed. In addition, H 2 concentration-dependent transport properties and anisotropic dielectric function of GeNRs and electric field and strain sensitive I-V characteristics of SnNRs are reviewed. We review both experimental and theoretical studies on the NRs of group III-V compounds. While defect and N-termination dependent conductance are highlighted for boron nitride NRs, aluminum nitride NRs are of importance due to their dangling bond, electric field, and strain dependent electronic and magnetic properties. Finally, superlattice structure of NRs of GaN/AlN, Si/Ge, G/BN, and MoS 2 /WS 2 is reviewed. Published by AIP Publishing.

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Phonon Properties of Few-Layer Crystals of Quasi-One-Dimensional ZrS₃ and ZrSe₃

Cited by 47 publications

References 42 publications

High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide

High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Nanoribbons: From fundamentals to state-of-the-art applications

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Phonon Properties of Few-Layer Crystals of Quasi-One-Dimensional ZrS3 and ZrSe3

Cited by 47 publications

References 42 publications

High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide

High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Nanoribbons: From fundamentals to state-of-the-art applications

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Product

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Phonon Properties of Few-Layer Crystals of Quasi-One-Dimensional ZrS₃ and ZrSe₃