Phonon transport in a curved aluminum thin film due to laser short pulse irradiation

Mansoor, Saad Bin; Yilbaş, Bekir Sami

doi:10.1016/j.optlastec.2017.11.013

Cited by 11 publications

(3 citation statements)

References 22 publications

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“…Nano-scaled metal and dielectric materials, and composites of metal-dielectric films, have attracted great interest because of their structural, optical, and electrical properties. Among such materials, aluminum (Al) thin films have been extensively studied, as they are easy to prepare and have novel optical properties [1,2]. Al is also the most abundant metal and the third most abundant element in the earth's crust, after oxygen and silicon.…”

Section: Introductionmentioning

confidence: 99%

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Khachatryan

Lee

Kim

et al. 2018

Metals

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In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.

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Section: Introductionmentioning

confidence: 99%

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Khachatryan

Lee

Kim

et al. 2018

Metals

View full text Add to dashboard Cite

show abstract

“…Aluminum (Al) thin films are widely used in optical and microelectronic applications. These thin films have attracted a considerable attention in both academic and industrial communities due to their remarkable properties and characteristics such as high reflectance, low resistivity, high conductance, better adhesion, resistance to oxidation and corrosion [1,2] and novel optical properties [3,4]. A significant scope of the Al thin films and tungsten oxide thin films [5,6], specifically in the formation of composite for industrial aircraft applications.…”

Section: Introductionmentioning

confidence: 99%

Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

et al. 2021

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In this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

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“…We chose to form aluminium selenide because of the potential of selenium in compound semiconductors such as zinc selenide, copper selenide (Durdua et al, 2013), lead selenide (Ezenwa, 2012) etc. The band gap of Al2Se3 has been reported as 3.1 eV at wavelength of 401 nm which make it possible to be potentially used in photoemitter (Mansoor & Yilbas, 2018;Beck & Funk, 2012).…”

Section: Introductionmentioning

confidence: 99%

Variation of Cathodic voltages and their effect on Optical Properties and Conductivity Type of Electrodeposited Aluminium Selenide Thin Films for Optoelectronic Applications

et al. 2020

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In this paper, Aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique in which graphite was used as a cathode while carbon as an anode. Synthesis is done at 353 K temperature from an aqueous solution of analytical grade selenium dioxide (SeO2), and Aluminum chloride (AlCl2.7H2O). Aluminum selenide thin films from a controlled medium (pH =2.0) are synthesized on fluorine doped tin oxide (FTO) substrate using varied potential voltages 1000 mV, 1100 mV, 1200 mV, 1300 mV and 1400 mV. The films are characterized for their optical properties and electrical conductivity. These various characterization reveals the successful fabrication of Al2Se3 thin films. Further investigation was done to study the effect of variation in the potential voltages.Keywords- Electrodeposition; Thin Films; Cathodic graphite; Characterization; Varied potential voltages.

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Phonon transport in a curved aluminum thin film due to laser short pulse irradiation

Cited by 11 publications

References 22 publications

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

Variation of Cathodic voltages and their effect on Optical Properties and Conductivity Type of Electrodeposited Aluminium Selenide Thin Films for Optoelectronic Applications

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