Phonon-wind-driven transport of photoexcited carriers in a semiconductor quantum well

Smith, L. M.; Preston, J. S.; Wolfe, J. P.; Wake, D. R.; Klem, John F.; Henderson, T.; Morkoç̌, H.

doi:10.1103/physrevb.39.1862

Cited by 64 publications

(37 citation statements)

References 25 publications

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“…Similar to other optical methods, this technique is contactless and therefore can be applied even when good contacts are difficult to make ͑see Ref. 12 and references therein͒. In particular, in this paper we study coupled electron-hole ͑e − h͒ layers separated by 4 nm barrier ͑12 nm between the centers of e and h layers͒.…”

Section: Introductionmentioning

confidence: 97%

Exciton front propagation in photoexcited GaAs quantum wells

et al. 2010

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We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.

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Section: Introductionmentioning

confidence: 97%

Exciton front propagation in photoexcited GaAs quantum wells

et al. 2010

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“…Ultrafast laser techniques are standard tools to study nonequilibrium carrier dynamics in semiconductors, owing to their superior temporal resolution [2]. Several laser techniques to study carrier transport have been developed, in-cluding the transient grating [3][4][5][6][7][8], spatially resolved pumpprobe [9][10][11][12][13][14][15][16][17][18][19][20], and spatially resolved photoluminescence [21][22][23][24][25][26]. However, the spatial resolution of these techniques is limited to the order of the wavelength of the light.…”

Section: Introductionmentioning

confidence: 99%

Optical studies of ballistic currents in semiconductors [Invited]

Ruzicka

Zhao

2012

J. Opt. Soc. Am. B

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We present a summary of recent studies of ballistic currents using nonlinear optical techniques. Quantum interference between one-and two-photon absorption pathways is used to inject and control ballistic currents in GaAs samples. With this, a pure charge current, pure spin current, or spin-polarized charge current can be injected by changing the polarization configuration of the two pump pulses. Such currents are temporally and spatially resolved using high-resolution pump-probe techniques, including a derivative-detection scheme, which allows detection of the motion of carriers as small as 0.1 nm. Observation of the intrinsic inverse spin Hall effect in the ballistic regime, a study of time-resolved ballistic spin-polarized charge currents, and a study of the efficiency of spin current injection by quantum interference were all achieved using these techniques. Additionally, we discuss demonstrations of second-order nonlinear optical effects induced by charge and spin currents, which allow for the nondestructive, noninvasive, and real-time imaging of currents.

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“…If the subsequent expansion is possible, it occurs in the quasi-diffusive regime [6]. Expermentally this picture seems to be observed in [7,8].…”

Section: Introductionmentioning

confidence: 68%

Influence of Sample Temperature on the Process of Hot Spot Formation and Degradation after Powerful Laser Pumping

Pronin

1992

Physica Status Solidi (b)

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The degradation of a hot spot obtained near one of the surfaces of a thin crystal plate of anthracene at helium temperatures is investigated. The experimental results are discussed in terms of the local thermal conductivity with both specific heat and thermal conductivity as well-known functions of temperature. A good agreement between experimental results and model calculations is achieved. Analyzing the results of calculations a conclusion is drawn on the strong influence of sample temperature on the process of hot spot formation immediately after laser pumping. The role of the sample defectiveness i s also discussed. The solution of the non-linear thermal conductivity equation used to describe experimental results is analyzed. It was found that initial conditions strongly affect the time evolution of the hot spot width. B Damof pa6OTe UccneAyeTca AerpaAauXa ropmero nmHa nonygemoro B~J I U~M O A H O~~

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Phonon-wind-driven transport of photoexcited carriers in a semiconductor quantum well

Cited by 64 publications

References 25 publications

Exciton front propagation in photoexcited GaAs quantum wells

Exciton front propagation in photoexcited GaAs quantum wells

Optical studies of ballistic currents in semiconductors [Invited]

Influence of Sample Temperature on the Process of Hot Spot Formation and Degradation after Powerful Laser Pumping

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