Eu). We have studied the dependences of the luminescence intensity on the energy of the exciting electrons, the electron beam current density, and the exposure time. We hypothesize that the decrease in the luminescence intensity during electron bombardment is connected with formation of new oxide layers as a result of an electron-stimulated surface chemical reaction.Introduction. Among the large number of materials for optoelectronics, luminescent materials are of special importance: they are used for designing displays, scintillators, and devices for recording and viewing information. The luminescence efficiency is determined to a significant degree by the characteristic features of the recombination process, generally due to luminescence centers of defect origin. In most multicomponent luminophores, the luminescence process is connected with recombinations involving complex defects and impurities, which in a number of cases work together to improve the luminescence efficiency and to change the spectral composition of the luminescence.Only three color components are needed for any full-color display: red, green, and blue, which in combination create all the colors in the visible spectrum. In most cathodoluminescent screens today, the following luminophores are used: Y 2 O 2 S:Eu, which emits red light; (Zn,Cd)S:Cu:Al emits green light; ZnS:Ag emits blue light. However, these sulfide-based luminophores are not suitable for many flat panel displays, which are currently under intensive development. Accordingly, a number of papers have appeared in which thin-film oxide materials have been studied as luminophores [1][2][3][4][5]. As shown by analysis of these papers, the authors use a narrow range of luminescent materials, which limits the total information available about the problem as a whole. This is why in this work, we have studied a number of oxide films which can be used in making the color components for a full-color display.Experimental Procedure. Thin films of Y 2 SiO 5 :Ce, Zn 2 SiO 4 :Ti, Zn 2 SiO 4 :Mn, and Y 2 O 3 :Eu of thickness 0.2-1.0 μm were obtained on quartz substrates by high-frequency magnetron sputtering from stoichiometric mixtures of the corresponding oxides. The activator content was 0.2-2.0 mol%. Immediately after sputtering, for a substrate temperature of 300