Phosphor(V)‐nitrid macht pyrotechnische Tarnnebel sicherer

Koch, Ernst‐Christian; Cudziło, S.

doi:10.1002/ange.201609532

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…Due to the isoelectronic elemental combination P/N and Si/O, the structural diversity of nitridophosphates is predicted to be at least as large as that of oxosilicates, consequently suggesting a field of application, which is in no way inferior. As of today, this includes the application as a gate insulator in metal–insulator semiconductor field-effect transistors (MISFETs), as an oxygen-eliminating material during the production of incandescent and tungsten halogen lamps and discussions regarding use in pyrotechnics safety, as a flame retardant, as a gas-storing material for ammonia, and as a candidate for a warm-white phosphor in solid-state lighting and lithium-ion conductivity. − …”

Section: Introductionmentioning

confidence: 99%

Nitride Synthesis under High-Pressure, High-Temperature Conditions: Unprecedented In Situ Insight into the Reaction

Ambach,

Pritzl,

Bhat

et al. 2024

Inorg. Chem.

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High-pressure, high-temperature (HP/HT) syntheses are essential for modern high-performance materials. Phosphorus nitride, nitridophosphate, and more generally nitride syntheses benefit greatly from HP/HT conditions. In this contribution, we present the first systematic in situ investigation of a nitridophosphate HP/HT synthesis using the reaction of zinc nitride Zn3N2 and phosphorus(V) nitride P3N5 to the nitride semiconductor Zn2PN3 as a case study. At a pressure of 8 GPa and temperatures up to 1300 °C, the reaction was monitored by energy-dispersive powder X-ray diffraction (ED-PXRD) in a large-volume press at beamline P61B at DESY. The experiments investigate the general behavior of the starting materials under extreme conditions and give insight into the reaction. During cold compression and subsequent heating, the starting materials remain crystalline above their ambient-pressure decomposition points, until a sufficient minimum temperature is reached and the reaction starts. The reaction proceeds via ion diffusion at grain boundaries with an exponential decay in the reaction rate. Raising the temperature above the minimum required value quickly completes the reaction and initiates single-crystal growth. After cooling and decompression, which did not influence the resulting product, the recovered sample was analyzed by energy-dispersive X-ray (EDX) spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Nitride Synthesis under High-Pressure, High-Temperature Conditions: Unprecedented In Situ Insight into the Reaction

Ambach,

Pritzl,

Bhat

et al. 2024

Inorg. Chem.

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Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP₂N₄NH

Vogel¹,

Buda²,

Schnick³

2019

Angewandte Chemie

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Non-metal nitrides such as BN,Si 3 N 4 ,and P 3 N 5 meet numerous demands on high-performance materials,a nd their high-pressure polymorphs exhibit outstanding mechanical properties.H erein, we present the silicon phosphorus nitride imide SiP 2 N 4 NH featuring sixfold coordinated Si. Using the multi-anvil technique, SiP 2 N 4 NH was obtained by highpressure high-temperature synthesis at 8GPa and 1100 8 8C with in situ formed HCl acting as am ineralizer. Its structure was elucidated by ac ombination of single-crystal X-ray diffraction and solid-state NMR measurements.M oreover, SiP 2 N 4 NH was characterized by energy-dispersive X-ray spectroscopya nd (temperature-dependent) powder X-ray diffraction. The highly condensed Si/P/N framework features PN 4 tetrahedra as well as the rare motif of SiN 6 octahedra, and is discussed in the context of ambient-pressure motifs competing with close-packing of nitride anions,representing amissing link in the high-pressure chemistry of non-metal nitrides.

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Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP₂N₄NH

2019

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Non‐metal nitrides such as BN, Si3N4, and P3N5 meet numerous demands on high‐performance materials, and their high‐pressure polymorphs exhibit outstanding mechanical properties. Herein, we present the silicon phosphorus nitride imide SiP2N4NH featuring sixfold coordinated Si. Using the multi‐anvil technique, SiP2N4NH was obtained by high‐pressure high‐temperature synthesis at 8 GPa and 1100 °C with in situ formed HCl acting as a mineralizer. Its structure was elucidated by a combination of single‐crystal X‐ray diffraction and solid‐state NMR measurements. Moreover, SiP2N4NH was characterized by energy‐dispersive X‐ray spectroscopy and (temperature‐dependent) powder X‐ray diffraction. The highly condensed Si/P/N framework features PN4 tetrahedra as well as the rare motif of SiN6 octahedra, and is discussed in the context of ambient‐pressure motifs competing with close‐packing of nitride anions, representing a missing link in the high‐pressure chemistry of non‐metal nitrides.

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Phosphor(V)‐nitrid macht pyrotechnische Tarnnebel sicherer

Cited by 4 publications

References 15 publications

Nitride Synthesis under High-Pressure, High-Temperature Conditions: Unprecedented In Situ Insight into the Reaction

Nitride Synthesis under High-Pressure, High-Temperature Conditions: Unprecedented In Situ Insight into the Reaction

Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP₂N₄NH

Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP₂N₄NH

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Phosphor(V)‐nitrid macht pyrotechnische Tarnnebel sicherer

Cited by 4 publications

References 15 publications

Nitride Synthesis under High-Pressure, High-Temperature Conditions: Unprecedented In Situ Insight into the Reaction

Nitride Synthesis under High-Pressure, High-Temperature Conditions: Unprecedented In Situ Insight into the Reaction

Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP2N4NH

Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP2N4NH

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Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP₂N₄NH

Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP₂N₄NH