Phosphorous doping of superlattice silicon quantum dots in silicon dioxide

Simonds, Brian J.; Perez-Würfl, Ivan; So, Yong Heng; Wan, A.; McMurray, S. J.; Taylor, P. C.

doi:10.1002/pssc.201200241

Cited by 5 publications

(2 citation statements)

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“…[2][3][4][5][6][7][8][9][10][11][12][13][14][15] In particular, it has been shown that electrically-activated impurity atoms located in substitutional sites tend to enhance the conductivity. [6][7][8][9][10] Theoretically, several works have studied the formation and ionization energies, and the opto-electronic properties of freestanding doped SiQDs.…”

Section: Introductionmentioning

confidence: 99%

Energetics and carrier transport in doped Si/SiO₂quantum dots

et al. 2015

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In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.[ Electronic Supplementary Information (ESI) available. See

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Section: Introductionmentioning

confidence: 99%

Energetics and carrier transport in doped Si/SiO₂quantum dots

et al. 2015

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“…Electron Spin Resonance (ESR) characterisation has previously been used to characterize n-type Si NCs. 11,12 From ESR characterisation, the slight increase in the photoluminescence (PL) intensity from P-doped Si NCs was understood to be due to inactivation of non-radiative recombination centres at the interface. 13 ESR on the shallow acceptor centres is not possible due to line broadening unless the NCs in the Si matrix are of a high degree of perfection, 14 a condition which is not in favour of Si NCs grown by the sputter-anneal method.…”

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Passivation effects in B doped self-assembled Si nanocrystals

Puthen-Veettil

Jia

et al. 2014

Applied Physics Letters

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Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes.

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Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

Zhang¹,

Puthen-Veettil²,

Wu³

et al. 2015

Journal of Applied Physics

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We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018–1019 cm−3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm−3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10−3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

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Phosphorous doping of superlattice silicon quantum dots in silicon dioxide

Cited by 5 publications

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Energetics and carrier transport in doped Si/SiO₂quantum dots

Energetics and carrier transport in doped Si/SiO₂quantum dots

Passivation effects in B doped self-assembled Si nanocrystals

Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

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Phosphorous doping of superlattice silicon quantum dots in silicon dioxide

Cited by 5 publications

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Energetics and carrier transport in doped Si/SiO2quantum dots

Energetics and carrier transport in doped Si/SiO2quantum dots

Passivation effects in B doped self-assembled Si nanocrystals

Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

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Energetics and carrier transport in doped Si/SiO₂quantum dots

Energetics and carrier transport in doped Si/SiO₂quantum dots