Phosphorus Doping of Si Nanosheets by Spin-on Dopant Proximity

Yang, Jeen Moon; Lee, Jaejun; Park, Tae Eon; Seo, Dongjea; Park, Jeong Min; Park, Sang Won; Na, Jukwan; Kwon, Juyoung; Lee, Hyo‐Jung; Ryu, Jaehyun; Choi, Heon Jin

doi:10.1007/s13391-018-00100-z

Cited by 7 publications

(3 citation statements)

References 33 publications

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“…The chemical profiles for different species diffused by RTA with various annealing Table 2. Parameters used in equation (5) [30]. properties as reported by the mobility values in table 3.…”

Section: Resultsmentioning

confidence: 99%

“…The possibility of diffusing the SOD only in specific areas is very interesting for new nanoelectronic applications: for instance, in the fin field effect transistor the channel has not to be doped, giving the gate higher ability to control threshold voltage, which is a very important property when the transistor is scaling down, while the source and drain regions can be doped locally by SOD process. Here, we have targeted high doping levels -even though perfectly localized-to address the needs of FinFET devices for plasmonic and quantum applications [29,30]. Clearly, such devices will not be the only perspective potentials of applications, but the necessity of having a high level of localized doping, makes them one of most challenging devices.…”

Section: Introductionmentioning

confidence: 99%

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Engineering of the spin on dopant process on silicon on insulator substrate

Barri

Mafakheri²,

Fagiani

et al. 2020

Nanotechnology

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We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into the substrate via SOD and then diffused by a rapid thermal annealing process. The dopant concentration and electron mobility were characterized at room and low temperature by four-probe and Hall bar electrical measurements. Time-of-flight-secondary ion mass spectroscopy was performed to estimate the diffusion profile of phosphorus for different annealing treatments. We find that a high phosphorous concentration (greater than 1020 atoms cm−3) with a limited diffusion of other chemical species and allowing to tune the electrical properties via annealing at high temperature for short time. The ease of implementation of the process, the low cost of the technique, the possibility to dope selectively and the uniform doping manufactured with statistical process control show that the methodology applied is very promising as an alternative to the conventional doping methods for the implementation of optoelectronic devices.

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“…The chemical profiles for different species diffused by RTA with various annealing Table 2. Parameters used in equation (5) [30]. properties as reported by the mobility values in table 3.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Engineering of the spin on dopant process on silicon on insulator substrate

Barri

Mafakheri²,

Fagiani

et al. 2020

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…Here we have used a non-destructive proximity diffusion technique for SOD process [24]. It is a contactless diffusion of dopant atom from dopant source to the film.…”

Section: Methodsmentioning

confidence: 99%

Unfolding the conductivity reversal n- to p-type in phosphorus-doped ZnO thin films by spin-on dopant (SOD) process

Mishra¹,

Saha²,

Bhowmick³

et al. 2022

J. Phys. D: Appl. Phys.

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Phosphorus doping induced p-type doping in ZnO thin films based on spin-on dopant (SOD) process is reported in this article. Owing to the reduced dependence on the conventional amenities for diffusion/ion-implantation doping, the SOD process provides a simple and cheap doping method. The effect of SOD process temperature on conductivity ZnO thin films is investigated by altering the temperature from 700 oC to 1000 oC. Systematic FESEM analysis demonstrates the impact of doping temperature on the morphological properties of SOD. The X-ray diffraction (XRD) measurements reveal that the p-type ZnO thin films had (002) preferred crystal orientation. At the same time, X-ray photoelectron spectroscopy (XPS) validated the formation of the PZn–2VZn complex, which was responsible for the acceptor behaviour of films. Moreover, the photoluminescence spectra tracked down that the origin of 3.35 and 3.32 eV emission peaks is due to the acceptor bound exciton and free-electron to acceptor level transitions, respectively. Finally, an elevated hole concentration of 2.09×1016 cm-3 is achieved with a resistivity of 1.14 Ω-cm at 800 oC doping temperature. However, the film doped at 900oC and 1000oC showed n-type behaviour due to the generation of high concentration donor defects. Here, we successfully demonstrate that the SOD process has great potential to produce high-quality p-type ZnO thin films suitable for optoelectronic devices applications.

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