Photo- and thermally stimulated luminescence and defects in UV-irradiated CsI:Tl and CsI:Pb crystals

Babin, V.; Fabeni, P.; Kalder, K.; Nikl, M.; Pazzi, G.P.; Zazubovich, S.

doi:10.1016/s1350-4487(98)00053-5

Cited by 13 publications

(18 citation statements)

References 10 publications

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“…In CsI:Pb crystal without Na + studied in [3] the TSL peak at 60 K was not observed after 4.8 eV irradiation. This peak appeared only under lower-energy irradiation and its intensity increased as the irradiation energy decreased, owing to the creation of close {Pb + -V K } pairs on the basis of the "own" lead ion.…”

Section: Discussionmentioning

confidence: 92%

“…It increases also after each quenching of a sample in a quartz ampoule, probably, due to the diffusion of Na + ions into the sample from the quartz. In the samples with extremely small Na + [3], the 60 K peak has been found to be very weak. The I 116 K /I 90 K ratio also depends strongly on the Na + content, increasing up to six times with the increase of the Na + concentration.…”

Section: Thermally Stimulated Luminescence and Afterglowmentioning

confidence: 95%

“…After T ann = 75 K (i.e. after the TSL peak at 60 K caused by recombinations of the close V K and electron centres [3,9]) the intensity of the STE emission decreases 1.7 times, while the 2.23 eV emission intensity, about 1.45 times. After T ann = 110 K (i.e.…”

Section: Photostimulated Luminescencementioning

confidence: 99%

“…The two first TSL peaks surely correspond to the well-known V K -related peaks at 60 K and 90 K, and they are further labeled as the 60 K and 90 K peaks. The peak at 60 K arises from the recombinations in close V K -impurity pairs which need no V K centre diffusion [3,9]. The peak at 90 K arises from the recombinations after the 90 o -diffusion of V K centres towards more distinct electron impurity centres.…”

Section: Thermally Stimulated Luminescence and Afterglowmentioning

confidence: 99%

“…In [2], the formation of V K centres has been found under irradiation of a CsI : Pb crystal at 4.2 K in the Pb 2+ -induced absorption bands located in the 5.1-3.9 eV energy range. It revealed itself in the appearance of the: (i) photostimulated self-trapped exciton (STE) emission bands at 4.29 and 3.65 eV, arising from the {e --+ V K } recombinations, (ii) ESR signal from V K centres, and (iii) thermally stimulated luminescence (TSL) peaks at 60 and 90 K, arising from the recombinations of V K and electron centres [2,3]. The creation of defects under irradiation of a crystal in the impurity-related absorption bands has been studied also for CsI : Tl in [4].…”

Section: Introductionmentioning

confidence: 99%

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Defect Creation under UV Irradiation of CsI:Pb Crystals in Pb2+-Induced Absorption Bands Investigated by Luminescence Methods

Babin

Kalder

Krasnikov

et al. 2002

phys. stat. sol. (b)

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The creation of defects in CsI:Pb crystals by ultraviolet radiation at 4.2 K has been investigated by thermally stimulated and optically stimulated luminescence methods. The origin of the optically created defects has been established. The dependences of the defect creation efficiency on the irradiation energy and time, on the uniaxial stress, and on the concentration of the impurity (Pb 2+ and Na + ) ions have been found. The charge-transfer processes taking place under irradiation of CsI : Pb crystals in the Pb 2+ -related absorption bands and resulting in the appearance of the selftrapped and localized exciton luminescence and in defect creation have been explained.

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Section: Discussionmentioning

confidence: 92%

Section: Thermally Stimulated Luminescence and Afterglowmentioning

confidence: 95%

Section: Photostimulated Luminescencementioning

confidence: 99%

Section: Thermally Stimulated Luminescence and Afterglowmentioning

confidence: 99%