Photo-assisted MBE growth of ZnSe crystals

Optical Properties of ZnSe Epilayers and Films

“…DLE is generally distinguished in (compare Fig. 13): -Y line emission at about 2.6 eV, associated with extended defects [9,64,65,75,80,2121 (see already Section 3.3), also reducing the carrier mobility [218]; -S or M lines at 2.5 eV often accompanied by LO-phonon replica and thus correlated with a kind of DAP involving shallow donors and distant deep acceptors of about 275 meV ionization energy [9]; -broad-band so-called "Cu-green" emission centered at about 2.3 to 2.4 eV, usually attributed to unintentional incorporation of Cu during growth 19, 51, 921 and often accompanied by a specific I;eep (or 1;) emission at about 2.78 eV due to the recombination of a Cu-acceptor-exciton complex (see Section 4.2), but also sometimes attributed to an exciton at a V, , acceptor center [51,93,173); -self-activated-center (SA) luminescence between 2.14 and 1.97 eV, possibly related to V,, vacancies [81] or a Vz,/Gaz, complex defect center [94].…”

“…This is attributed to the formation of compensating deep (V,,-Gas,) centers [21 I]. In [106], it was shown that planar doping, i.e., Ga deposition in separated atomic layers acbieved simply by limited opening periods of the Ga-source shutter in MBE, drastically reduces 75…”

Tailoring Heterovalent Interface Formation with Light

“…Widening of the surface features with increasing lamp power could be due to one of two factors: enhanced dissociation of multiatomic Se molecules or improvement in adatom mobility. Regarding the first possibility, the dissociation energy of multiatomic Se molecules is 3.55 eV 27 . Thus, direct absorption of photons with energies greater than 3.55 eV may lead to higher cracking rates.…”

Effects of photo-assisted electrodeposited on CuInSe2 thin films

“…A photo-assisted molecular beam epitaxy (MBE) process using an Hg lamp has been investigated by Tseng et al [ 8 ]. They found that the photo-assisted MBE process dramatically reduced the epitaxial temperature to 300°C, where photons may supply an additional energy to the film surface and activate the surface diffusion and the dissociation of Se 2 and Se 4 molecules [ 9 ]. Nakada et al [ 10 ] also proposed a laser-assisted deposition (LAD) process using the MBE system.…”