Photo-enhanced acetone adsorption on δ-MnO2 nanoparticles: A step towards non-invasive detection of diabetes mellitus

Mohan, Vigneshwaran; Marappan, Gobinath; Chidambaram, David; Rajendran, Kumaresan; Surya, Velappa Jayaraman; Venugopal, Gunasekaran; Sivalingam, Yuvaraj

doi:10.1016/j.matlet.2021.130944

Cited by 10 publications

(1 citation statement)

References 18 publications

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“…Light-activated gas sensors have been widely studied as an effective improvement method in recent years. Under the assistance of light irradiation, there will be more electrons and holes with high activity generated on the surface of materials, which is beneficial to the adsorption and desorption of target gases [15,16]. Wang et al [17] found that ZnO nanoplates exhibited a great enhancement in sensitivity and recovery time in NO 2 detection under intermittent UV irradiation.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient NO2 Sensors Based on Al-ZnOHF under UV Assistance

Yao

Wang

et al. 2023

Materials

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Zinc hydroxyfluoride (ZnOHF) is a newly found resistive semiconductor used as a gas-sensing material with excellent selectivity to NO2 because of its unique energy band structure. In this paper, Al3+ doping and UV radiation were used to further improve the gas-sensing performance of ZnOHF. The optimized 0.5 at.% Al-ZnOHF sample exhibits improved sensitivity to 10 ppm NO2 at a lower temperature (100 °C) under UV assistance, as well as a short response/recovery time (35 s/96 s). The gas-sensing mechanism demonstrates that Al3+ doping increases electron concentration and promotes electron transfer of the nanorods by reducing the bandgap of ZnOHF, and the photogenerated electrons and holes with high activity under UV irradiation provide new reaction routes in the gas adsorption and desorption process, effectively promoting the gas-sensing process. The synergistic effect of Al3+ and UV radiation contribute to the enhanced performance of Al-ZnOHF.

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Section: Introductionmentioning

confidence: 99%

Highly Efficient NO2 Sensors Based on Al-ZnOHF under UV Assistance

Yao

Wang

et al. 2023

Materials

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Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

George

Vikraman

Reji

et al. 2022

Adv Materials Technologies

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with titanium nitride (TiN) as the most common example. [1] Along with their superior mechanical properties, these are good conductors being employed as permanent contact layers and diffusion barriers in microelectronics. [1] In addition, nitrides are well explored as novel piezoelectric and thermoelectric materials, generally in the area of energy harvesting (e.g., aluminium nitride (AlN)). AlN has been well studied in the past 20 years due to its excellent properties, such as wide bandgap, high thermal conductivity, high hardness, and high thermal stability. Its thin film has a high piezoelectric coefficient (d 33 = 5.5 pCN -1 ). [2] There is a plethora of literature available on transition metal nitride in both thin-film and bulk forms for various applications. [1] Among nitrides, the ternary transition metal nitrides (TTMNs), particularly II-IV-N 2, have emerged as a recent attraction in the electronic industry due to their attractive structural and electrical properties and, importantly, the ability to offer tunable properties such as bandgap, etc. [1] The small amount of scandium (Sc)-doping into AlN significantly increased the piezoelectric properties. [2] The most explored prototypes in this category Self-powered, wide-spectral response, fast, and high-sensitivity photo detectors are essential for developing next-generation optoelectronic devices. In this work, the predicted optoelectronic properties of the ternary metal-zinc (Zn)nitride (N) thin films are experimentally demonstrated. A novel phase of the Titanium (Ti)-Zn-N system (dominantly TiZnN 2 film of ≈235 nm thickness) is developed on the p-Si substrate, which shows excellent optoelectronic properties. The Indium Tin Oxide (ITO)/TiZnN 2 /p-type Si (p-Si) photodetector of area ≈4 mm 2 exhibits an impressive responsivity of 1.22 × 10 -4 A W −1 at 0 V and 40 mA W −1 at −4 V, a specific detectivity up to 1.16 × 10 9 Jones at 0 V, and a response speed of 1.9 ms at zero external bias (i.e., self-powered mode). Benefiting from the broad-band absorption of the film and p-Si combination, the detection range is observed from the ultraviolet to near-infrared (300-1150 nm). Simultaneous operation of self-powered photo-triggered drip irrigation ON and street light OFF in the early morning and vice-versa in the evening is demonstrated for autonomous farming. The device is insensitive to humidity and ambiance, and generates a photocurrent with light intensity as low as 5 mW cm −2 . The active layer is hydrophobic and highly stable, and the fabrication is cost-effective.

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